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PD500

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
ANADIGICS 光电二极管光电二极管
页数 文件大小 规格书
2页 124K
描述
500レm InGaAs Photodiode

PD500 数据手册

 浏览型号PD500的Datasheet PDF文件第2页 
PD500  
500μm InGaAs Photodiode  
FEATURES  
Planar Structure  
Dielectric Passivation  
High Shunt Resistance  
High Responsivity  
APPLICATIONS  
PD500-0xx  
Ceramic Sub-Mount  
PD500-1xx  
TO can Package  
High Sensitivity Instrumentation  
Laser Back Facet Monitoring  
PRODUCT DESCRIPTION  
The PD500 is an InGaAs photodiode with a  
photosensitive region 500μm in diameter. It is  
intended for use in high sensitivity  
instrumentation, laser back-facet monitoring  
and low bit rate communication systems.  
Planar semiconductor design and dielectric  
passivation provide superior noise performance.  
The device can be assembled on a ceramic sub-  
mount or in an hermetic TO46 can. Custom  
packages are an option.  
ELECTRICAL CHARACTERISTICS  
Table 1: Electrical Specifications  
PARAMETER  
MIN  
TYP  
MAX  
UNIT  
nA  
Dark Current (ID) (1)  
Capacitance (2)  
-
-
25  
-
-
-
-
-
-
20  
pF  
Responsivity at 1310nm  
Responsivity at 1550nm  
Rise/Fall time  
Shunt Resistance (Class A) (2)  
0.80  
0.85  
-
0.90  
0.95  
3
A/W  
A/W  
ns  
50  
-
M  
(1) 5V reverse bias  
(2) 0V reverse bias  

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