Datasheet > PD500-0XX

PD500-0XX

更新时间： 2024-11-19 03:42:51

品牌	Logo	应用领域
ANADIGICS		光电二极管光电二极管
页数	文件大小	规格书
2页	124K
描述
500レm InGaAs Photodiode

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技术参数
数据手册

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PD500-0XX 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.59	Is Samacsys：	N
Base Number Matches：	1

PD500-0XX 数据手册

PD500

500μm InGaAs Photodiode

FEATURES

•

Planar Structure

Dielectric Passivation

High Shunt Resistance

High Responsivity

APPLICATIONS

PD500-0xx

Ceramic Sub-Mount

PD500-1xx

TO can Package

•

High Sensitivity Instrumentation

Laser Back Facet Monitoring

PRODUCT DESCRIPTION

The PD500 is an InGaAs photodiode with a

photosensitive region 500μm in diameter. It is

intended for use in high sensitivity

instrumentation, laser back-facet monitoring

and low bit rate communication systems.

Planar semiconductor design and dielectric

passivation provide superior noise performance.

The device can be assembled on a ceramic sub-

mount or in an hermetic TO46 can. Custom

packages are an option.

ELECTRICAL CHARACTERISTICS

Table 1: Electrical Specifications

PARAMETER

MIN

TYP

MAX

UNIT

Dark Current (I_D) ⁽¹⁾

Capacitance ⁽²⁾

Responsivity at 1310nm

Responsivity at 1550nm

Rise/Fall time

Shunt Resistance (Class A) ⁽²⁾

0.80

0.85

0.90

0.95

A/W

MΩ

(1) 5V reverse bias

(2) 0V reverse bias

中文翻译

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