Datasheet > PD1M-1XX

PD1M-1XX

更新时间： 2024-01-22 13:05:59

品牌	Logo	应用领域
ANADIGICS		光电二极管光电二极管
页数	文件大小	规格书
2页	124K
描述
1mm InGaAs Photodiode

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中文翻译

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技术参数
数据手册

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PD1M-1XX 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.61	Base Number Matches：	1

PD1M-1XX 数据手册

PD1M

1mm InGaAs Photodiode

FEATURES

•

Planar Structure

Dielectric Passivation

High Shunt Resistance

High Responsivity

APPLICATIONS

PD1M-0xx

Ceramic Sub-Mount

PD1M-1xx

TO46 can Package

•

Sensing

High Sensitivity Instrumentation

PRODUCT DESCRIPTION

The PD1M is an InGaAs photodiode with a

photosensitive region 1mm in diameter.

Applications include sensing and other high

sensitivity instrumentation. Class A devices

feature very low dark current and high shunt

resistance.

High reliability is assured through planar

semiconductor design and dielectric passivation.

The device can be assembled on a ceramic sub-

mount or in an hermetic TO46 can. Custom

packages are an option.

ELECTRICAL CHARACTERISTICS

Table 1: Electrical Specifications

PARAMETER

MIN

TYP

MAX

UNIT

Dark Current (I_D) ⁽¹⁾

Capacitance ⁽²⁾

150

0.90

0.95

Responsivity at 1310nm

Responsivity at 1550nm

Rise/Fall time

Shunt Resistance (Class A) ⁽²⁾

Shunt Resistance (Class B) ⁽²⁾

0.80

0.85

A/W

MΩ

(1) 1V reverse bias

(2) 0V reverse bias

中文翻译

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