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PD1M

更新时间: 2024-09-25 03:42:55
品牌 Logo 应用领域
ANADIGICS 光电二极管光电二极管
页数 文件大小 规格书
2页 124K
描述
1mm InGaAs Photodiode

PD1M 数据手册

 浏览型号PD1M的Datasheet PDF文件第2页 
PD1M  
1mm InGaAs Photodiode  
FEATURES  
Planar Structure  
Dielectric Passivation  
High Shunt Resistance  
High Responsivity  
APPLICATIONS  
PD1M-0xx  
Ceramic Sub-Mount  
PD1M-1xx  
TO46 can Package  
Sensing  
High Sensitivity Instrumentation  
PRODUCT DESCRIPTION  
The PD1M is an InGaAs photodiode with a  
photosensitive region 1mm in diameter.  
Applications include sensing and other high  
sensitivity instrumentation. Class A devices  
feature very low dark current and high shunt  
resistance.  
High reliability is assured through planar  
semiconductor design and dielectric passivation.  
The device can be assembled on a ceramic sub-  
mount or in an hermetic TO46 can. Custom  
packages are an option.  
ELECTRICAL CHARACTERISTICS  
Table 1: Electrical Specifications  
PARAMETER  
MIN  
TYP  
MAX  
UNIT  
nA  
Dark Current (ID) (1)  
-
-
50  
-
-
-
-
-
-
-
Capacitance (2)  
150  
0.90  
0.95  
15  
pF  
Responsivity at 1310nm  
Responsivity at 1550nm  
Rise/Fall time  
Shunt Resistance (Class A) (2)  
Shunt Resistance (Class B) (2)  
0.80  
0.85  
-
A/W  
A/W  
ns  
50  
1
-
M  
MΩ  
-
(1) 1V reverse bias  
(2) 0V reverse bias  

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