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PD160F40 PDF预览

PD160F40

更新时间: 2024-11-17 22:07:23
品牌 Logo 应用领域
SANREX 栅极触发装置可控硅整流器
页数 文件大小 规格书
2页 118K
描述
THYRISTOR MODULE

PD160F40 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.73
Is Samacsys:N最大直流栅极触发电流:100 mA
最大直流栅极触发电压:3 V快速连接描述:0
螺丝端子的描述:0最大维持电流:50 mA
最大漏电流:50 mA通态非重复峰值电流:5500 A
最大通态电压:1.4 V最大通态电流:160000 A
最高工作温度:125 °C最低工作温度:-40 °C
重复峰值反向电压:400 V子类别:Silicon Controlled Rectifiers
Base Number Matches:1

PD160F40 数据手册

 浏览型号PD160F40的Datasheet PDF文件第2页 
THYRISTOR MODULE  
(
)
PD,PE,KK  
PK  
160F  
UL:E76102M)  
Power Thyristor/Diode Module PK160F series are designed for various rectifier circuits  
and power controls. For your circuit application. following internal connections and wide  
voltage ratings up to 1,600V are available. Two elements in a package and electrically  
isolated mounting base make your mechanical design easy.  
92  
26  
12  
26  
7
4-φ6M5�  
T(AV)  
T(RMS)  
160A, I  
TSM  
250A, I  
I
5500A  
di/dt 200 A/μs  
dv/dt 500V/μs  
18  
2
R8.0  
K2  
G2  
K2  
G2  
M8×14  
Applications)  
Various rectifiers  
AC/DC motor drives  
Heater controls  
Light dimmers  
3
2
1
K1G1  
(A2)�  
(K2)�  
3
2
1
A1K2  
♯110TAB  
(2.8.0.5T�  
K1  
(K2)�  
(A2)�  
A1K2  
PK  
PE  
K2  
2
K2  
G2  
3
2
1
1
1
K1G1  
(A2)�  
(K2)�  
K1G1  
(A2)�  
A1K2  
(A1)�  
80±0.3  
Static switches  
PD  
KK  
Unit:  
A
Maximum Ratings  
Ratings  
PK160F120  
PK160F40  
PD160F40  
PE160F40  
KK160F40  
PK160F80  
PD160F80  
PE160F80  
KK160F80  
PK160F160  
PD160F160  
PE160F160  
KK160F160  
Symbol  
Item  
Unit  
PD160F120  
PE160F120  
KK160F120  
RRM  
V
400  
480  
400  
800  
960  
800  
1200  
1300  
1200  
1600  
1700  
1600  
V
V
V
Repetitive Peak Reverse Voltage  
Non-Repetitive Peak Reverse Voltage  
Repetitive Peak Off-State Voltage  
RSM  
V
DRM  
V
Symbol  
Item  
Conditions  
Ratings  
160  
Unit  
A
T(AV) F(AV)  
I
, I  
Average On-State Current  
R.M.S. On-State Current  
Surge On-State Current  
Single phase, half wave, 180°conduction, Tc87℃  
Single phase, half wave, 180°conduction, Tc87℃  
cycle, 50Hz/60Hz, peak Value, non-repetitive  
Value for one cycle of surge current  
T(RMS) F(RMS)  
I
, I  
250  
A
1
TSM FSM  
I
, I  
A
5000 5500  
/
2
2
2
2
I t  
A S  
I t  
1.25×105  
GM  
P
Peak Gate Power Dissipation  
Average Gate Power Dissipation  
Peak Gate Current  
10  
W
W
A
GAV)  
P
3
FGM  
I
3
10  
FGM  
V
Peak Gate Voltage (Forward)  
Peak Gate Voltage (Reverse)  
Critical Rate of Rise of On-State Current  
V
RGM  
V
5
V
1
G
D
DRM  
G
200  
didt  
I 100mATj25V =  
V
dI dt0.1A μs  
A μs  
/
/
/
2
ISO  
V
A.C.1minute  
2500  
V
Isolation Breakdown Voltage (R.M.S.)  
Operating Junction Temperature  
Tj  
40 to 125  
40 to 125  
2.728)  
11115)  
510  
Tstg  
Storage Temperature  
MountingM5Recommended 1.5-2.515-25)  
TerminalM8Recommended 8.8-10 90-105)  
Mounting  
Torque  
N・m  
(㎏fB)  
g
Mass  
Electrical Characteristics  
Symbol  
DRM  
I
Item  
Conditions  
at V , single phase, half wave, Tj125℃  
Ratings  
50  
Unit  
mA  
mA  
V
Repetitive Peak Off-State Current, max.  
Repetitive Peak Reverse Current, max.  
Peak On-State Voltage, max.  
Gate Trigger Current/Voltage, max.  
Non-Trigger Gate, Voltage. min.  
Turn On Time, max.  
DRM  
RRM  
I
DRM  
50  
at V , single phase, half wave, Tj125℃  
TM  
V
1.42  
On-State Current 500A, Tj25Inst. measurement  
GT  
GT  
T
D
I V  
Tj25℃,I 1AV 6V  
100 3  
mA V  
/
/
1
GD  
V
D
DRM  
0.25  
10  
V
Tj125℃,V =/V  
I 160AI 100mATj25V =  
Tj125, V =/V , Exponential wave.  
2
1
tgt  
T
G
D
DRM  
G
V
dI dt0.1A μs  
μs  
/
/
2
2
Critical Rate of Rise of Off-State Voltage, min.  
Holding Current, typ.  
D
DRM  
500  
50  
dvdt  
V μs  
/
3
H
I
mA  
mA  
Tj25℃  
Tj25℃  
Junction to case  
L
I
Lutching Current, typ.  
100  
0.18  
Rthj-c) *Thermal Impedance, max.  
W  
/
markThyristor and Diode part. No markThyristor part  
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com  

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