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PD130FG160 PDF预览

PD130FG160

更新时间: 2024-11-13 19:55:47
品牌 Logo 应用领域
SANREX 栅极
页数 文件大小 规格书
2页 96K
描述
Silicon Controlled Rectifier, 130000mA I(T), 1600V V(RRM)

PD130FG160 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.75
最大直流栅极触发电流:50 mA最大直流栅极触发电压:3 V
快速连接描述:G-K-AK螺丝端子的描述:A-K-AK
最大漏电流:35 mA通态非重复峰值电流:3200 A
最大通态电流:130000 A最高工作温度:125 °C
最低工作温度:-40 °C重复峰值反向电压:1600 V
子类别:Silicon Controlled RectifiersBase Number Matches:1

PD130FG160 数据手册

 浏览型号PD130FG160的Datasheet PDF文件第2页 
THYRISTOR MODULE  
(
)
PD,PE  
PK 130FG  
UL;E76102M)  
Power Thyristor/Diode Module PK130FG series are designed for various rectifier  
circuits and power controls. For your circuit application, following internal connections  
and wide voltage ratings up to 1600V are available. and electrically isolated mounting  
base make your mechanical design easy.  
92�  
200�200�200�  
5�  
-φ6 0�  
T(AV)  
T(RMS)  
TSM  
205A, I  
I
130A, I  
3500A  
di/dt 100A/μs  
Internal Configurations  
dv/dt 1000V/μs  
M5× 10�  
8�  
K2  
G2  
4-11TAB  
Applications)  
Various rectifiers  
K2  
G2  
3
2
1
K1G1  
(A2)�  
(K2)�  
3
2
1
A1K2  
K1  
(A2)�  
(K2)�  
A1K2  
NAME PLATE  
AC/DC motor drives  
Heater controls  
Light dimmers  
PK  
PE  
0±02�  
K2  
3
2
1
K1G1  
(A2)�  
(K2)�  
A1K2  
Static switches  
Unit:  
A
PD  
Maximum Ratings  
Tj25unless otherwise specified)  
Ratings  
Symbol  
Item  
Unit  
PK130FG40  
PK130FG80  
PK130FG120  
PK130FG160  
1600  
VRRM  
VRSM  
VDRM  
400  
480  
400  
800  
960  
800  
1200  
1300  
1200  
V
V
V
Repetitive Peak Reverse Voltage  
Non-Repetitive Peak Reverse Voltage  
Repetitive Peak off-state Voltage  
1700  
1600  
Ratings  
Symbol  
Item  
Conditions  
Unit  
A
TAV)  
I
130  
Average On-state Current  
R.M.S. On-state Current  
Surge On-state Current  
Single phase, half wave, 180°conduction, Tc83℃  
TRMS)  
I
205  
A
Single phase, half wave, 180°conduction, Tc83℃  
1
TSM  
I
Z
A
Cycle, 50/60H , Peak Value, non-repetitive  
3200/3500  
2
2
2
2
I t  
Value for one cycle surge current  
51040  
A S  
I t  
GM  
P
Peak Gate Power Dissipation  
Average Gate Power Dissipation  
Peak Gate Current  
10  
W
W
GAV)  
P
1
FGM  
I
3
10  
A
FGM  
V
Peak Gate Voltage (Forward)  
Peak Gate Voltage (Reverse)  
Critical Rate of Rise of On-state Current  
V
RGM  
V
5
V
1
G
D
DRM  
G
100  
di/dt  
I 100mAV =/V di /dt0.1A/μs  
A/μs  
V
2
ISO  
V
A.C. 1minute  
2500  
Isolation Breakdown VoltageR.M.S.)  
Tj  
Operating Junction Temperature  
40 to +125  
40 to +125  
2.728)  
2.728)  
170  
Tstg  
Storage Temperature  
MountingM5Recommended Value 1.5-2.515-25)  
Mounting  
Torque  
Nm  
(㎏fB)  
Termina  
l M5Recommended Value 1.5-2.515- 25)  
Mass  
Typical Value  
g
Electrical Characteristics  
Ratings  
35  
Symbol  
Item  
Conditions  
Unit  
mA  
mA  
V
DRM  
I
Repetitive Peak off-state Current,max  
Repetitive Peak Reverse Current,max  
D
DRM  
Tj125℃,V V  
RRM  
I
D
DRM  
35  
Tj125℃,V V  
TM  
V
T
1.6  
Gn-state Voltage,max  
Gate Trigger Current,max  
Gate Trigger Voltage,max  
Gate Non-Trigger Voltage,min  
Critical Rate of Rise of off-state Voltage,min  
I 390A  
GT  
I
D
T
50  
mA  
V
V 6VI 1A  
GT  
V
D
T
3
V 6VI 1A  
1
GD  
V
D
DRM  
0.25  
1000  
0.20  
V
Tj125℃,V =  
2V  
2
D
DRM  
dv/dt  
Tj125℃,V =/V  
V/μs  
/W  
3
Junction to case  
Rthj-c)*Thermal Impedance,max  
markThyristor and Diode part. No markThyristor part  
SanRex  
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com  

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