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PD030

更新时间: 2024-09-20 03:42:55
品牌 Logo 应用领域
ANADIGICS 光电二极管光电二极管
页数 文件大小 规格书
2页 136K
描述
30レm InGaAs Photodiode

PD030 数据手册

 浏览型号PD030的Datasheet PDF文件第2页 
PD030  
30μm InGaAs Photodiode  
FEATURES  
Planar Structure  
Very High Speed  
Low Dark Current  
Dielectric Passivation  
100% Purge Burn-in  
PD030-003-0xx  
Ceramic Sub-Mount  
PD030-003-1xx  
TO can Package  
APPLICATIONS  
10Gb/s Optical Receivers  
Test and Measurement  
PRODUCT DESCRIPTION  
The PD030 is an InGaAs photodiode with a  
Reliability is assured by hermetic sealing and  
100% purge burn-in (200°C, 15 hours, Vr = 20V).  
The device can be assembled on a ceramic sub-  
mount or in a TO can. It can be pigtailed with SC,  
FC, or ST connectors (UPC or APC). It can also  
be mounted in an SC, ST of FC receptacle.  
Custom packages are an option.  
photosensitive region 30μm in diameter. It is  
intended for use in very high speed, low noise  
communication systems (up to 10Gb/s data  
rates) and for use in optical test and  
measurement equipment.  
Planar semiconductor design and dielectric  
passivation provide low noise performance.  
ELECTRICAL CHARACTERISTICS  
Table 1: Electrical Specifications  
PARAMETER  
MIN  
TYP  
0.1  
MAX  
UNIT  
nA  
Dark Current (ID)  
-
1.0  
Capacitance (Ceramic sub-mount) (1)  
Capacitance (TO can) (1)  
-
0.27  
0.4  
0.32  
pF  
-
0.5  
pF  
Responsivity at 1310nm (Ceramic sub-mount)  
Responsivity at 1550nm (Ceramic sub-mount)  
Responsivity at 1310nm (TO can)  
Responsivity at 1550nm (TO can)  
3dB bandwidth (50) (Ceramic sub-mount) (1)  
3dB bandwidth (50) (TO can) (1)  
Operating voltage  
0.80  
0.85  
0.80  
0.85  
9000  
5800  
-
0.90  
0.95  
0.85  
0.90  
11000  
7200  
5
-
-
A/W  
A/W  
A/W  
A/W  
MHz  
MHz  
V
-
-
-
-
20  
(1) 5V bias voltage  

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