PCDP1065GC
Silicon Carbide Schottky Barrier Diode
VRRM
VF(Typ.)
650 V
1.5 V
IF
10 A
TO-220AC
QC
22 nC
Features
Temperature Independent Switching Behavior
High Surge Current Capability
Low Switching Loss
Zero Reverse Recovery
High junction temperature 175 oC
Lead free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard
①
③
Mechanical Data
Case: TO-220AC molded plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 1.8903 grams
Application
PFC, UPS, PV Inverter, EV Charging Station, Welder
Maximum Ratings and Thermal Characteristics (TC = 25 oC unless otherwise specified)
PARAMETER
Repetitive Peak Reverse Voltage
SYMBOL
LIMIT
UNITS
VRRM
VDC
IF
650
650
10
V
V
A
DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Surge Current
Half Sine Wave, D=0.1
Peak Forward Surge Current
Half Sine Wave
TC= 145 oC
TC= 25 oC , tp =10ms
TC=125 oC , tp =10ms
TC= 25 oC , tp =10ms
TC=125 oC , tp =10ms
36
IFRM
A
A
A
28
36
32
IFSM
Peak Forward Surge Current
tp =10us, Pulse
392
Maximum Power Dissipation
Ptotal
TJ
109
W
oC
oC
Operating Junction Temperature Range
Storage Temperature Range
-55~175
-55~175
TSTG
April 11,2023
PCDP1065GC-REV.00
Page 1