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PCDP1065GB PDF预览

PCDP1065GB

更新时间: 2023-12-18 00:00:00
品牌 Logo 应用领域
强茂 - PANJIT /
页数 文件大小 规格书
5页 327K
描述
TO-220AC

PCDP1065GB 数据手册

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PCDP1065GB  
Silicon Carbide Schottky Barrier Diode  
VRRM  
VF(Typ.)  
650 V  
1.3 V  
IF  
10 A  
TO-220AC  
QC  
35 nC  
Features  
Temperature Independent Switching Behavior  
High Surge Current Capability  
Competitive VF 1.3V at rated current  
Low Conduction Loss  
Zero Reverse Recovery  
High junction temperature 175 oC  
Lead free in compliance with EU RoHS 2.0  
Green molding compound as per IEC 61249 standard  
Mechanical Data  
Case: TO-220AC molded plastic  
Terminals: Solderable per MIL-STD-750, Method 2026  
Approx. Weight: 1.8903 grams  
Application  
PFC, UPS, PV Inverter, EV Charging Station, Welder  
Maximum Ratings and Thermal Characteristics (TC = 25 oC unless otherwise specified)  
PARAMETER  
Repetitive Peak Reverse Voltage  
SYMBOL  
LIMIT  
UNITS  
VRRM  
VDC  
IF  
650  
650  
10  
V
V
A
DC Blocking Voltage  
Continuous Forward Current  
Repetitive Peak Surge Current  
Half Sine Wave, D=0.1  
Peak Forward Surge Current  
Half Sine Wave  
TC= 160 oC  
TC= 25 oC , tp =10ms  
TC=125 oC , tp =10ms  
TC= 25 oC , tp =10ms  
TC=125 oC , tp =10ms  
52  
IFRM  
A
A
A
44  
64  
56  
IFSM  
Peak Forward Surge Current  
tp =10us, Pulse  
584  
Maximum Power Dissipation  
Ptotal  
TJ  
149.2  
W
oC  
oC  
Operating Junction Temperature Range  
Storage Temperature Range  
-55~175  
-55~175  
TSTG  
April 11,2023  
PCDP1065GB-REV.00  
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