PCDH3065CCG1
Silicon Carbide Schottky Barrier Diode
VRRM
650 V
1.5 V
IF
2 x 15 A
38 nC
TO-247AD-3LD
QC
VF(Typ.)
Features
Temperature Independent Switching Behavior
High Surge Current Capability
Low Conduction Loss
Zero Reverse Recovery
High junction temperature 175 oC
Lead free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard
①
Mechanical Data
②
③
Case: TO-247AD-3LD molded plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.2198 ounces, 6.231 grams
Application
PFC, UPS, PV Inverter, EV Charging Station, Welder
Maximum Ratings and Thermal Characteristics (TC = 25 oC unless otherwise specified)
PARAMETER
Repetitive Peak Reverse Voltage
SYMBOL
LIMIT
UNITS
VRRM
VDC
650
650
V
V
DC Blocking Voltage
Continuous Forward Current
(Per Leg/Device)
TC= 140 oC
IF
15 / 30
A
A
A
A
Repetitive Peak Surge Current
Half Sine Wave, D=0.1 (Per Leg)
Peak Forward Surge Current
Half Sine Wave (Per Leg)
TC= 25 oC , tp =10ms
TC=125 oC , tp =10ms
TC= 25 oC , tp =10ms
TC=125 oC , tp =10ms
68
64
52
40
IFRM
IFSM
Peak Forward Surge Current
tp =10us, Pulse (Per Leg)
800
Maximum Power Dissipation (Per Leg)
Operating Junction Temperature Range
Storage Temperature Range
Ptotal
TJ
135.1
W
oC
oC
-55~175
-55~175
TSTG
February 22,2022
PCDH3065CCG1-REV.00
Page 1