Datasheet > PCDH2065CCG1

PCDH2065CCG1

更新时间： 2024-11-12 14:55:43

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
5页	423K
描述
TO-247AD-3LD

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中文翻译

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数据手册

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PCDH2065CCG1 数据手册

PCDH2065CCG1

Silicon Carbide Schottky Barrier Diode

V_RRM

650 V

1.5 V

I_F

2 x 10 A

24 nC

TO-247AD-3LD

Q_C

V_F(Typ.)

Features

 Temperature Independent Switching Behavior

 High Surge Current Capability

 Low Conduction Loss

 Zero Reverse Recovery

 High junction temperature 175 ^oC

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

①

Mechanical Data

②

③

 Case: TO-247AD-3LD molded plastic

 Terminals: Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.2198 ounces, 6.231 grams

Application

 PFC, UPS, PV Inverter, EV Charging Station, Welder

Maximum Ratings and Thermal Characteristics (T_C= 25 ^oC unless otherwise specified)

PARAMETER

Repetitive Peak Reverse Voltage

SYMBOL

LIMIT

UNITS

V_RRM

V_DC

650

DC Blocking Voltage

Continuous Forward Current

(Per Leg/Device)

T_C= 145 ^oC

I_F

10 / 20

Repetitive Peak Surge Current

Half Sine Wave, D=0.1 (Per Leg)

Peak Forward Surge Current

Half Sine Wave (Per Leg)

T_C= 25 ^oC , t_p=10ms

T_C=125 ^oC , t_p=10ms

T_C= 25 ^oC , t_p=10ms

T_C=125 ^oC , t_p=10ms

I_FRM

I_FSM

Peak Forward Surge Current

t_p=10us, Pulse (Per Leg)

640

Maximum Power Dissipation (Per Leg)

Operating Junction Temperature Range

Storage Temperature Range

P_total

T_J

^oC

-55~175

T_STG

February 22,2022

PCDH2065CCG1-REV.00

Page 1

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