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PCDE10120G1 PDF预览

PCDE10120G1

更新时间: 2023-12-06 20:11:11
品牌 Logo 应用领域
强茂 - PANJIT /
页数 文件大小 规格书
5页 1948K
描述
TO-263

PCDE10120G1 数据手册

 浏览型号PCDE10120G1的Datasheet PDF文件第2页浏览型号PCDE10120G1的Datasheet PDF文件第3页浏览型号PCDE10120G1的Datasheet PDF文件第4页浏览型号PCDE10120G1的Datasheet PDF文件第5页 
Silicon Carbide Schottky Barrier Diode  
VRRM  
1200 V  
1.5 V  
IF  
10 A  
TO-263 ( Pin1 is NC pin )  
QC  
VF(Typ.)  
42 nC  
Features  
Temperature Independent Switching Behavior  
High Surge Current Capability  
Positive Temperature Coefficient on VF  
Low Conduction Loss  
Zero Reverse Recovery  
High junction temperature 175 oC  
Lead free in compliance with EU RoHS 2.0  
Green molding compound as per IEC 61249 standard  
Mechanical Data  
Case: TO-263 molded plastic  
Terminals: Solderable per MIL-STD-750, Method 2026  
Approx. Weight: 0.0487 ounces, 1.38 grams  
Application  
PFC, UPS, PV Inverter, Welder  
Maximum Ratings and Thermal Characteristics (TC = 25 oC unless otherwise specified)  
PARAMETER  
Repetitive Peak Reverse Voltage  
SYMBOL  
LIMIT  
UNITS  
VRRM  
VDC  
IF  
1200  
1200  
10  
V
V
A
DC Blocking Voltage  
Continuous Forward Current  
Repetitive Peak Surge Current  
Half Sine Wave, D=0.1  
Peak Forward Surge Current  
Half Sine Wave  
TC= 155 oC  
TC= 25 oC , tp =10ms  
TC=125 oC , tp =10ms  
TC= 25 oC , tp =10ms  
TC=125 oC , tp =10ms  
48  
IFRM  
A
A
A
40  
76  
68  
IFSM  
Peak Forward Surge Current  
tp =10us, Pulse  
640  
Maximum Power Dissipation  
Ptotal  
TJ  
164.8  
W
oC  
oC  
Operating Junction Temperature Range  
Storage Temperature Range  
-55~175  
-55~175  
TSTG  
June 7,2021  
PCDE10120G1-REV.00  
Page 1  

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