Datasheet > PCDD08120G1

PCDD08120G1

更新时间： 2024-11-12 14:54:43

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
5页	325K
描述
TO-252AA

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数据手册

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PCDD08120G1 数据手册

PCDD08120G1

Silicon Carbide Schottky Barrier Diode

V_RRM

1200 V

1.5 V

I_F

8 A

TO-252AA

Q_C

V_F(Typ.)

32 nC

Features

②

 Temperature Independent Switching Behavior

 High Surge Current Capability

 Positive Temperature Coefficient on V_F

 Low Conduction Loss

①

 Zero Reverse Recovery

 High junction temperature 175 ^oC

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

③

Mechanical Data

 Case: TO-252AA molded plastic

 Terminals: Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0113 ounces, 0.3217 grams

Application

 PFC, UPS, PV Inverter, EV Charging Station, Welder

Maximum Ratings and Thermal Characteristics (T_C= 25 ^oC unless otherwise specified)

PARAMETER

Repetitive Peak Reverse Voltage

SYMBOL

LIMIT

UNITS

V_RRM

V_DC

I_F

1200

DC Blocking Voltage

Continuous forward current

Repetitive Peak Surge Current

Half Sine Wave, D=0.1

Peak Forward Surge Current

Half Sine Wave

T_C= 160 ^oC

T_C= 25 ^oC , t_p=10ms

T_C=125 ^oC , t_p=10ms

T_C= 25 ^oC , t_p=10ms

T_C=125 ^oC , t_p=10ms

I_FRM

I_FSM

Peak Forward Surge Current

t_p=10us, Pulse

560

Maximum Power Dissipation

P_total

T_J

156.3

^oC

Operating Junction Temperature Range

Storage Temperature Range

-55~175

T_STG

September 15,2021

PCDD08120G1-REV.00

Page 1

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