Datasheet > PCDB0865G1

PCDB0865G1

更新时间： 2024-11-22 14:55:03

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
5页	1930K
描述
TO-263

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中文翻译

获取价格

数据手册

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PCDB0865G1 数据手册

Silicon Carbide Schottky Barrier Diode

V_RRM

650 V

1.5 V

I_F

8 A

TO-263

Q_C

V_F(Typ.)

15.7 nC

Features

 Temperature Independent Switching Behavior

 High Surge Current Capability

②

 Positive Temperature Coefficient on V_F

 Low Conduction Loss

 Zero Reverse Recovery

 High junction temperature 175 ^oC

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case: TO-263 molded plastic

 Terminals: Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0487 ounces, 1.38 grams

Application

• PFC, UPS, PV Inverter, EV Charging Station, Welder

Maximum Ratings and Thermal Characteristics (T_C= 25 ^oC unless otherwise specified)

PARAMETER

Repetitive Peak Reverse Voltage

SYMBOL

LIMIT

UNITS

V_RRM

V_DC

I_F

650

DC Blocking Voltage

Continuous Forward Current

Repetitive Peak Surge Current

Half Sine Wave, D=0.1

Peak Forward Surge Current

Half Sine Wave

T_C= 145 ^oC

T_C= 25 ^oC , t_p=10ms

T_C=125 ^oC , t_p=10ms

T_C= 25 ^oC , t_p=10ms

T_C=125 ^oC , t_p=10ms

I_FRM

I_FSM

Peak Forward Surge Current

t_p=10us, Pulse

480

Maximum Power Dissipation

P_total

T_J

78.5

^oC

Operating Junction Temperature Range

Storage Temperature Range

-55~175

T_STG

June 3,2021

PCDB0865G1-REV.00

Page 1

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