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PC28F640J3C115 PDF预览

PC28F640J3C115

更新时间： 2024-02-03 18:04:48
品牌 Logo 应用领域
英特尔 - INTEL 闪存存储内存集成电路
页数 文件大小 规格书
72页 990K
描述
Intel StrataFlash® Memory

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PC28F640J3C115 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：BGA包装说明：LEAD FREE, BGA-64
针数：64Reach Compliance Code：compliant
风险等级：5.69Is Samacsys：N
最长访问时间：115 ns备用内存宽度：8
命令用户界面：YES通用闪存接口：YES
数据轮询：NOJESD-30 代码：R-PBGA-B64
JESD-609代码：e1长度：13 mm
内存密度：67108864 bit内存集成电路类型：FLASH
湿度敏感等级：3功能数量：1
部门数/规模：64端子数量：64
字数：4194304 words字数代码：4000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：4MX16
封装主体材料：PLASTIC/EPOXY封装代码：TBGA
封装等效代码：BGA64,8X8,40封装形状：RECTANGULAR
封装形式：GRID ARRAY, THIN PROFILE页面大小：4/8 words
并行/串行：PARALLEL峰值回流温度（摄氏度）：260
电源：3/3.3 V编程电压：2.7 V
认证状态：Not Qualified就绪/忙碌：YES
座面最大高度：1.2 mm部门规模：128K
最大待机电流：0.00012 A子类别：Flash Memories
最大压摆率：0.08 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：TIN SILVER COPPER
端子形式：BALL端子节距：1 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：15
切换位：NO类型：NOR TYPE
宽度：10 mmBase Number Matches：1

PC28F640J3C115 数据手册

 浏览型号PC28F640J3C115的Datasheet PDF文件第2页浏览型号PC28F640J3C115的Datasheet PDF文件第3页浏览型号PC28F640J3C115的Datasheet PDF文件第4页浏览型号PC28F640J3C115的Datasheet PDF文件第5页浏览型号PC28F640J3C115的Datasheet PDF文件第6页浏览型号PC28F640J3C115的Datasheet PDF文件第7页 
Intel StrataFlash® Memory (J3)  
28F256J3, 28F128J3, 28F640J3, 28F320J3 (x8/x16)  
Datasheet  
Product Features  
■ Performance  
■ Architecture  
—110/115/120/150 ns Initial Access Speed  
—Multi-Level Cell Technology: High  
Density at Low Cost  
—125 ns Initial Access Speed (256 Mbit  
density only)  
—High-Density Symmetrical 128-Kbyte  
Blocks  
—25 ns Asynchronous Page mode Reads  
—256 Mbit (256 Blocks) (0.18µm only)  
—128 Mbit (128 Blocks)  
—64 Mbit (64 Blocks)  
—30 ns Asynchronous Page mode Reads  
(256Mbit density only)  
—32-Byte Write Buffer  
—32 Mbit (32 Blocks)  
—6.8 µs per byte effective  
■ Quality and Reliability  
—Operating Temperature:  
-40 °C to +85 °C  
programming time  
■ Software  
—Program and Erase suspend support  
—100K Minimum Erase Cycles per Block  
—0.18 µm ETOX™ VII Process (J3C)  
—Flash Data Integrator (FDI), Common  
Flash Interface (CFI) Compatible  
■ Security  
—0.25 µm ETOX™ VI Process (J3A)  
■ Packaging and Voltage  
—128-bit Protection Register  
—64-bit Unique Device Identifier  
—64-bit User Programmable OTP Cells  
—56-Lead TSOP Package  
®
—64-Ball Intel Easy BGA Package  
—Lead-free packages available  
®
—48-Ball Intel VF BGA Package (32 and  
—Absolute Protection with VPEN = GND  
—Individual Block Locking  
—Block Erase/Program Lockout during  
Power Transitions  
64 Mbit) (x16 only)  
—VCC 2.7 V to 3.6 V  
=
—VCCQ = 2.7 V to 3.6 V  
Capitalizing on Intel’s 0.25 and 0.18 micron, two-bit-per-cell technology, the Intel StrataFlash® Memory (J3)  
device provides 2X the bits in 1X the space, with new features for mainstream performance. Offered in 256-  
Mbit (32-Mbyte), 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the J3 device brings reliable, two-bit-  
per-cell storage technology to the flash market segment. Benefits include more density in less space, high-speed  
interface, lowest cost-per-bit NOR device, support for code and data storage, and easy migration to future  
devices.  
Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, the J3 device takes  
advantage of over one billion units of flash manufacturing experience since 1987. As a result, J3 components  
are ideal for code and data applications where high density and low cost are required. Examples include  
networking, telecommunications, digital set top boxes, audio recording, and digital imaging.  
By applying FlashFile™ memory family pinouts, J3 memory components allow easy design migrations from  
existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation Intel StrataFlash®  
memory (28F640J5 and 28F320J5) devices.  
J3 memory components deliver a new generation of forward-compatible software support. By using the  
Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take advantage of density  
upgrades and optimized write capabilities of future Intel StrataFlash® memory devices. Manufactured on Intel®  
0.18 micron ETOX™ VII (J3C) and 0.25 micron ETOX™ VI (J3A) process technology, the J3 memory device  
provides the highest levels of quality and reliability.  
Notice: This document contains information on new products in production. The specifications are  
subject to change without notice. Verify with your local Intel sales office that you have the latest  
datasheet before finalizing a design.  
Order Number: 290667-020  
November 2004  
1234567...72

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与PC28F640J3C115相关器件

型号 品牌 获取价格 描述 数据表
PC28F640J3C-115 INTEL

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 		Intel StrataFlash Memory (J3)
PC28F640J3C-120 INTEL

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 		Intel StrataFlash Memory (J3)
PC28F640J3C-125 INTEL

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 		Intel StrataFlash Memory (J3)
PC28F640J3C-150 INTEL

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 		Intel StrataFlash Memory (J3)
PC28F640J3D-75 NUMONYX

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 		Numonyx Embedded Flash Memory
PC28F640J3D75A NUMONYX

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 		Flash, 4MX16, 75ns, PBGA64, LEAD FREE, ESBGA-64
PC28F640J3D75D NUMONYX

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 		Flash, 4MX16, 75ns, PBGA64, LEAD FREE, ESBGA-64
PC28F640J3D75E NUMONYX

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 		Flash, 4MX16, 75ns, PBGA64, LEAD FREE, ESBGA-64
PC28F640J3F75 NUMONYX

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 		Flash, 4MX16, 75ns, PBGA64, LEAD FREE, ESBGA-64
PC28F640J3F75A MICRON

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 		32Mb, 64Mb, 128Mb, 65nm Embedded Parallel NOR Flash Memory, Single Bit Per Cell (SBC)

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