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PC28F320J3F75B PDF预览

PC28F320J3F75B

更新时间: 2024-01-18 18:35:37
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
66页 2203K
描述
32Mb, 64Mb, 128Mb, 65nm Embedded Parallel NOR Flash Memory, Single Bit Per Cell (SBC)

PC28F320J3F75B 数据手册

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Numonyx® Embedded Flash Memory (J3 65  
nm) Single Bit per Cell (SBC)  
32, 64, and 128 Mbit  
Datasheet  
Product Features  
„ Architecture  
„ Security  
— Symmetrical 128-KB blocks  
— 128 Mbit (128 blocks)  
— 64 Mbit (64 blocks)  
— Enhanced security options for code  
protection  
— Absolute protection with VPEN = Vss  
— Individual block locking  
— 32 Mbit (32 blocks)  
— Block erase/program lockout during power  
transitions  
— Password Access feature  
— One-Time Programmable Register:  
64 OTP bits, programmed with unique  
information by Numonyx  
— Blank Check to verify an erased block  
„ Performance  
— Initial Access Speed: 75ns  
— 25 ns 8-word Asynchronous page-mode  
reads  
— 256-Word write buffer for x16 mode, 256-  
Byte write buffer for x8 mode;  
1.41 µs per Byte Effective programming  
time  
64 OTP bits, available for customer  
programming  
„ Software  
— Program and erase suspend support  
— Numonyx® Flash Data Integrator (FDI)  
— Common Flash Interface (CFI) Compatible  
— Scalable Command Set  
„ System Voltage  
— VCC = 2.7 V to 3.6 V  
— VCCQ = 2.7 V to 3.6 V  
„ Packaging  
„ Quality and Reliability  
— 56-Lead TSOP  
— 64-Ball Easy BGA package  
— Operating temperature:  
-40 °C to +85 °C  
— 100K Minimum erase cycles per block  
— 65 nm Flash Technology  
— JESD47E Compliant  
208032-03  
Jan 2011  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2010 Micron Technology, Inc. All rights reserved.  

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