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PC28F320J3D75A PDF预览

PC28F320J3D75A

更新时间: 2023-01-03 05:39:38
品牌 Logo 应用领域
恒忆 - NUMONYX 内存集成电路存储闪存
页数 文件大小 规格书
66页 959K
描述
Flash, 2MX16, 75ns, PBGA64, LEAD FREE, ESBGA-64

PC28F320J3D75A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:BGA, BGA64,8X8,40Reach Compliance Code:compliant
风险等级:5.82最长访问时间:75 ns
备用内存宽度:8命令用户界面:YES
通用闪存接口:YES数据轮询:NO
JESD-30 代码:S-PBGA-B64内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:16
部门数/规模:32端子数量:64
字数:2097152 words字数代码:2000000
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装等效代码:BGA64,8X8,40
封装形状:SQUARE封装形式:GRID ARRAY
页面大小:4/8 words并行/串行:PARALLEL
电源:3/3.3 V认证状态:Not Qualified
就绪/忙碌:YES部门规模:128K
最大待机电流:0.00012 A子类别:Flash Memories
最大压摆率:0.054 mA表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:1 mm
端子位置:BOTTOM切换位:NO
类型:NOR TYPEBase Number Matches:1

PC28F320J3D75A 数据手册

 浏览型号PC28F320J3D75A的Datasheet PDF文件第2页浏览型号PC28F320J3D75A的Datasheet PDF文件第3页浏览型号PC28F320J3D75A的Datasheet PDF文件第4页浏览型号PC28F320J3D75A的Datasheet PDF文件第5页浏览型号PC28F320J3D75A的Datasheet PDF文件第6页浏览型号PC28F320J3D75A的Datasheet PDF文件第7页 
®
Intel Embedded Flash Memory (J3 v. D)  
32, 64, 128, and 256 Mbit (Monolithic)  
Datasheet  
Product Features  
„ Architecture  
„ Security  
— Symmetrical 128-Kbyte blocks  
— 256 Mbit (256 blocks)  
— 128 Mbit (128 blocks)  
— 64 Mbit (64 blocks)  
— 32 Mbit (32 blocks)  
— Enhanced security options for code  
protection  
— 128-bit Protection Register:  
64-bits Unique device identifier bits  
64-bits User-programmable OTP bits  
— Absolute protection with VPEN = GND  
— Individual block locking  
„ Performance  
— Block erase/program lockout during power  
transitions  
— 75 ns Initial Access Speed (32,64,128  
Mbit densities)  
— 95 ns Initial Access Speed (256Mbit only)  
— 25 ns 8-word and 4-word Asynchronous  
page-mode reads  
„ Software  
— Program and erase suspend support  
— Flash Data Integrator (FDI), Common Flash  
Interface (CFI) Compatible  
— 32-Byte Write buffer;  
4 µs per Byte Effective programming time  
„ Quality and Reliability  
„ System Voltage  
— Operating temperature:  
-40 °C to +85 °C  
— 100K Minimum erase cycles per block  
— 0.13 µm ETOX™ VIII Process technology  
— VCC = 2.7 V to 3.6 V  
— VCCQ = 2.7 V to 3.6 V  
„ Packaging  
— 56-Lead TSOP (32, 64, 128, 256 Mbit)  
— 64-Ball Intel® Easy BGA package (32, 64,  
128 and 256 Mbit)  
Document Number: 316577-006  
December 2007  

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