Datasheet > PC28F256P30BFR

PC28F256P30BFR

更新时间： 2024-01-18 18:35:37

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
98页	1366K
描述
1.7V to 2.0V VCC (core) voltage, 1.7V to 3.6V VCCQ (I/O) voltage

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中文翻译

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数据手册
替代型号

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PC28F256P30BFR 数据手册

256Mb and 512Mb (256Mb/256Mb), P30-65nm

Features

Micron Parallel NOR Flash Embedded

Memory (P30-65nm)

JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx,

RD48F4400P0VBQEx, RC48F4400P0VB0Ex,

PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx

• Security

Features

• High performance

– One-time programmable register: 64 OTP bits,

programmed with unique information from Mi-

cron; 2112 OTP bits available for customer pro-

gramming

– 100ns initial access for Easy BGA

– 110ns initial access for TSOP

– 25ns 16-word asychronous page read mode

– 52 MHz (Easy BGA) with zero WAIT states and

17ns clock-to-data output synchronous burst

read mode

– Absolute write protection: V_PP= V_SS

– Power-transition erase/program lockout

– Individual zero-latency block locking

– Individual block lock-down

– Password access

• Software

– 4-, 8-, 16-, and continuous word options for burst

mode

– Buffered enhanced factory programming (BEFP)

at 2 MB/s (TYP) using a 512-word buffer

– 1.8V buffered programming at 1.14 MB/s (TYP)

using a 512-word buffer

– 25μs (TYP) program suspend

– 25μs (TYP) erase suspend

– Flash Data Integrator optimized

– Basic command set and extended function Inter-

face (EFI) command set compatible

– Common flash interface

• Architecture

– MLC: highest density at lowest cost

– Asymmetrically blocked architecture

– Four 32KB parameter blocks: top or bottom con-

figuration

– 128KB main blocks

– Blank check to verify an erased block

• Voltage and power

• Density and Packaging

– 56-lead TSOP package (256Mb only)

– 64-ball Easy BGA package (256Mb, 512Mb)

– QUAD+ and SCSP packages (256Mb, 512Mb)

– 16-bit wide data bus

• Quality and reliabilty

– V_CC(core) voltage: 1.7V to 2.0V

– V_CCQ(I/O) voltage: 1.7V to 3.6V

– Standy current: 65µA (TYP) for 256Mb

– 52 MHz continuous synchronous read current:

21mA (TYP), 24mA (MAX)

– JESD47 compliant

– Operating temperature: –40°C to +85°C

– Minimum 100,000 ERASE cycles per block

– 65nm process technology

PDF: 09005aef84566799

p30_65nm_MLC_256Mb-512mb.pdf - Rev. C 12/13 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...98

中文翻译

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PC28F256P30BFR 替代型号

型号	品牌	替代类型	描述	数据表
RC28F256P30BFE	MICRON	完全替代	256Mb and 512Mb (256Mb/256Mb), P30-65nm
PC28F256P30TFE	MICRON	完全替代	256Mb and 512Mb (256Mb/256Mb), P30-65nm
PC28F256P30BFE	MICRON	完全替代	256Mb and 512Mb (256Mb/256Mb), P30-65nm

与PC28F256P30BFR相关器件

型号	品牌	获取价格	描述	数据表
PC28F256P30T85	NUMONYX	获取价格	Numonyx StrataFlash Embedded Memory
PC28F256P30T85	INTEL	获取价格	Intel StrataFlash Embedded Memory
PC28F256P30T85A	NUMONYX	获取价格	Flash, 16MX16, 88ns, PBGA64, LEAD FREE, BGA-64
PC28F256P30T85A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
PC28F256P30T85B	NUMONYX	获取价格	Flash, 16MX16, 88ns, PBGA64, LEAD FREE, BGA-64
PC28F256P30T85B	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
PC28F256P30T85D	NUMONYX	获取价格	暂无描述
PC28F256P30TFA	MICRON	获取价格	Micron Parallel NOR Flash Embedded Memory (P30-65nm)
PC28F256P30TFE	MICRON	获取价格	256Mb and 512Mb (256Mb/256Mb), P30-65nm
PC28F256P33B85	INTEL	获取价格	Flash, 16MX16, 85ns, PBGA64, LEAD FREE, BGA-64

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