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PC28F128M29EWLX

更新时间： 2024-09-21 00:46:39
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
87页 1118K
描述
Parallel NOR Flash Embedded Memory

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PC28F128M29EWLX 数据手册

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32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash  
Features  
Parallel NOR Flash Embedded Memory  
JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX  
PC28F064M29EWXX; JR28F064M29EWXX; PZ28F064M29EWXX  
JS28F128M29EWXX; PC28F128M29EWXX; RC28F128M29EWXX  
• VPP/WP# pin protection  
– VPPH voltage on VPP to accelerate programming  
Features  
• Supply voltage  
– VCC = 2.7–3.6V (program, erase, read)  
– VCCQ = 1.65–3.6V (I/O buffers)  
• Asynchronous random or page read  
– Page size: 8 words or 16 bytes  
performance  
– Protects highest/lowest block (H/L uniform) or  
top/bottom two blocks (T/B boot)  
• Software protection  
– Volatile protection  
– Nonvolatile protection  
– Page access: 25ns  
– Random access: 60ns (BGA); 70ns (TSOP)  
• Buffer program: 256-word MAX program buffer  
• Program time  
– Password protection  
– Password access  
• Extended memory block  
– 0.56µs per byte (1.8 MB/s TYP when using 256-  
word buffer size in buffer program without VPPH  
– 0.31µs per byte (3.2 MB/s TYP when using 256-  
– 128-word (256-byte) block for permanent secure  
identification  
– Program or lock implemented at the factory or by  
the customer  
• Low-power consumption: Standby mode  
• JESD47H-compliant  
– 100,000 minimum ERASE cycles per block  
– Data retention: 20 years (TYP)  
• 65nm single-bit cell process technology  
• Packages (JEDEC-standard)  
– 56-pin TSOP (128Mb, 64Mb)  
– 48-pin TSOP (64Mb, 32Mb)  
– 64-ball FBGA (128Mb, 64Mb)  
– 48-ball BGA (64Mb, 32Mb)  
• Green packages available  
– RoHS-compliant  
)
word buffer size in buffer program with VPPH  
• Memory organization  
)
– 32Mb: 64 main blocks, 64KB each, or eight 8KB  
boot blocks (top or bottom) and 63 main blocks,  
64KB each  
– 64Mb: 128 main blocks, 64KB each, or eight 8KB  
boot blocks (top or bottom) and 127 main blocks,  
64 KB each  
– 128Mb: 128 main blocks, 128KB each  
• Program/erase controller  
– Embedded byte/word program algorithms  
• Program/erase suspend and resume capability  
– READ operation on any block during a PRO-  
GRAM SUSPEND operation  
– Halogen-free  
– READ or PROGRAM operation on one block dur-  
ing an ERASE SUSPEND operation on another  
block  
• Operating temperature  
– Ambient: –40°C to +85°C  
• BLANK CHECK operation to verify an erased block  
• Unlock bypass, block erase, chip erase, and write to  
buffer capability  
– Fast buffered/batch programming  
– Fast block and chip erase  
PDF: 09005aef84dc44a7  
m29ew_32Mb-128Mb.pdf - Rev. B 11/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
1
© 2012 Micron Technology, Inc. All rights reserved.  
Products and specifications discussed herein are subject to change by Micron without notice.  
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PC28F128M29EWLX 替代型号

型号 品牌 替代类型 描述 数据表
PC28F128M29EWLA MICRON

完全替代

 (x8/x16), 3V, Single Bit Per Cell, Page Read, Parallel NOR Flash Memory
PC28F128M29EWHX MICRON

完全替代

 Parallel NOR Flash Embedded Memory
PC28F128M29EWHF MICRON

完全替代

 Parallel NOR Flash Embedded Memory

与PC28F128M29EWLX相关器件

型号 品牌 获取价格 描述 数据表
PC28F128M29EWXX MICRON

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 		Parallel NOR Flash Embedded Memory
PC28F128P30B85 NUMONYX

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 		Numonyx StrataFlash Embedded Memory
PC28F128P30B85 INTEL

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 		Intel StrataFlash Embedded Memory
PC28F128P30B85A NUMONYX

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 		暂无描述
PC28F128P30B85B NUMONYX

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 		Flash, 8MX16, 88ns, PBGA64, LEAD FREE, BGA-64
PC28F128P30B85D NUMONYX

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 		Flash, 8MX16, 88ns, PBGA64, LEAD FREE, BGA-64
PC28F128P30B85E NUMONYX

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 		暂无描述
PC28F128P30BF65A MICRON

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 		64Mb, 128Mb, 65nm, Single Bit Per Cell, Parallel NOR Flash
PC28F128P30BF65E MICRON

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 		64Mb, 128Mb, 65nm, Single Bit Per Cell, Parallel NOR Flash
PC28F128P30T85 INTEL

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 		Intel StrataFlash Embedded Memory

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