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PBLS6023D,115 PDF预览

PBLS6023D,115

更新时间: 2024-02-27 06:49:46
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
16页 100K
描述
PBLS6023D - 60 V, 1.5 A PNP BISS loadswitch TSOP 6-Pin

PBLS6023D,115 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否Rohs认证:符合
生命周期:Transferred零件包装代码:TSOP
针数:6Reach Compliance Code:compliant
风险等级:5.56Is Samacsys:N
Base Number Matches:1

PBLS6023D,115 数据手册

 浏览型号PBLS6023D,115的Datasheet PDF文件第2页浏览型号PBLS6023D,115的Datasheet PDF文件第3页浏览型号PBLS6023D,115的Datasheet PDF文件第4页浏览型号PBLS6023D,115的Datasheet PDF文件第5页浏览型号PBLS6023D,115的Datasheet PDF文件第6页浏览型号PBLS6023D,115的Datasheet PDF文件第7页 
PBLS6023D  
60 V, 1.5 A PNP BISS loadswitch  
Rev. 01 — 13 August 2009  
Product data sheet  
1. Product profile  
1.1 General description  
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-  
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)  
plastic package.  
1.2 Features  
I Low VCEsat (BISS) and resistor-equipped transistor in one package  
I Low threshold voltage (<1 V) compared to MOSFET  
I Space-saving solution  
I Reduction of component count  
I AEC-Q101 qualified  
1.3 Applications  
I Supply line switches  
I Battery charger switches  
I High-side switches for LEDs, drivers and backlights  
I Portable equipment  
1.4 Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
TR1; PNP low VCEsat transistor  
VCEO  
IC  
collector-emitter voltage  
collector current  
open base  
-
-
-
-
-
-
60  
1.5  
3  
V
A
A
ICM  
peak collector current  
single pulse;  
tp 1 ms  
[1]  
RCEsat  
collector-emitter saturation IC = 1.5 A;  
-
110  
175  
mΩ  
resistance  
IB = 100 mA  
TR2; NPN resistor-equipped transistor  
VCEO  
IO  
collector-emitter voltage  
output current  
open base  
-
-
50  
V
-
-
100  
13  
mA  
kΩ  
R1  
bias resistor 1 (input)  
bias resistor ratio  
7
10  
1
R2/R1  
0.8  
1.2  
[1] Pulse test: tp 300 µs; δ ≤ 0.02.  
 
 
 
 
 
 

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