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PBLS6021D PDF预览

PBLS6021D

更新时间: 2024-01-11 01:17:10
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
16页 109K
描述
60 V, 1.5 A PNP BISS loadswitch

PBLS6021D 数据手册

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PBLS6021D  
60 V, 1.5 A PNP BISS loadswitch  
Rev. 01 — 12 August 2009  
Product data sheet  
1. Product profile  
1.1 General description  
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-  
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)  
plastic package.  
1.2 Features  
I Low VCEsat (BISS) and resistor-equipped transistor in one package  
I Low threshold voltage (<1 V) compared to MOSFET  
I Space-saving solution  
I Reduction of component count  
I AEC-Q101 qualified  
1.3 Applications  
I Supply line switches  
I Battery charger switches  
I High-side switches for LEDs, drivers and backlights  
I Portable equipment  
1.4 Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
TR1; PNP low VCEsat transistor  
VCEO  
IC  
collector-emitter voltage  
collector current  
open base  
-
-
-
-
-
-
60  
1.5  
3  
V
A
A
ICM  
peak collector current  
single pulse;  
tp 1 ms  
[1]  
RCEsat  
collector-emitter saturation IC = 1.5 A;  
-
110  
175  
mΩ  
resistance  
IB = 100 mA  
TR2; NPN resistor-equipped transistor  
VCEO  
IO  
collector-emitter voltage  
output current  
open base  
-
-
50  
V
-
-
100  
2.86  
1.2  
mA  
kΩ  
R1  
bias resistor 1 (input)  
bias resistor ratio  
1.54  
0.8  
2.2  
1
R2/R1  
[1] Pulse test: tp 300 µs; δ ≤ 0.02.  

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