PBLS6021D
60 V, 1.5 A PNP BISS loadswitch
Rev. 01 — 12 August 2009
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
plastic package.
1.2 Features
I Low VCEsat (BISS) and resistor-equipped transistor in one package
I Low threshold voltage (<1 V) compared to MOSFET
I Space-saving solution
I Reduction of component count
I AEC-Q101 qualified
1.3 Applications
I Supply line switches
I Battery charger switches
I High-side switches for LEDs, drivers and backlights
I Portable equipment
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
TR1; PNP low VCEsat transistor
VCEO
IC
collector-emitter voltage
collector current
open base
-
-
-
-
-
-
−60
−1.5
−3
V
A
A
ICM
peak collector current
single pulse;
tp ≤ 1 ms
[1]
RCEsat
collector-emitter saturation IC = −1.5 A;
-
110
175
mΩ
resistance
IB = −100 mA
TR2; NPN resistor-equipped transistor
VCEO
IO
collector-emitter voltage
output current
open base
-
-
50
V
-
-
100
2.86
1.2
mA
kΩ
R1
bias resistor 1 (input)
bias resistor ratio
1.54
0.8
2.2
1
R2/R1
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.