Datasheet > PBLS1504Y-Q

PBLS1504Y-Q

更新时间： 2024-03-03 10:10:49

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	244K
描述
15 V 500 mA PNP/NPN loadswitch double transistorProduction

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PBLS1504Y-Q 数据手册

PBLS1504Y-Q

15 V 500 mA PNP/NPN loadswitch double transistor

1 June 2023

Product data sheet

1. General description

Low V_CEsatPNP transistor and NPN Resistor- Equipped Transistor (RET) in a very small SOT363

(SC-88) Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

Low V_CEsatand resistor-equipped transistor in one package

•

Low threshold voltage (<1 V) compared to MOSFET

Low drive power required

Space-saving solution

Reduction of component count

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Supply line switches

Battery charger switches

High-side switches for LEDs, drivers and backlights

Portable equipment

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Transistor TR1: PNP

V_CEO

collector-emitter

open base

-15

voltage

I_C

collector current

-500

500

mΩ

R_CEsat

collector-emitter

I_C= -500 mA; I_B= -50 mA; T_amb= 25 °C [1]

300

saturation resistance

Transistor TR2: NPN

V_CEO

collector-emitter

open base

voltage

I_O

output current

bias resistor 1 (input)

bias resistor ratio

100

28.6

1.2

kΩ

[2]

15.4

0.8

R2/R1

[1] Pulse test: t_p≤ 300 µs; δ ≤ 0.02

[2] See "Section 11: Test information" for resistor calculation and test conditions.

12 3 4 5 6 7...11

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