Datasheet > PBHV9215Z-Q

PBHV9215Z-Q

更新时间： 2024-11-18 15:18:39

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	252K
描述
150 V, 2 A PNP high-voltage low VCEsat transistorProduction

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PBHV9215Z-Q 数据手册

PBHV9215Z-Q

150 V, 2 A PNP high-voltage low VCEsat transistor

17 July 2023

Product data sheet

1. General description

PNP high-voltage low V_CEsattransistor in a medium power SOT223 (SC-73) Surface-Mounted

Device (SMD) plastic package.

NPN complement: PBHV8215Z-Q

2. Features and benefits

•

High voltage

•

Low collector-emitter saturation voltage V_CEsat

High collector current capability I_Cand I_CM

High collector current gain h_FEat high I_C

Medium power SMD plastic package

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

LED driver for LED chain module

LCD backlighting

Automotive motor management

Switch Mode Power Supply (SMPS)

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-150

I_C

collector current

DC current gain

-2

h_FE

V_CE= -10 V; I_C= -100 mA; pulsed; t_p≤

300 µs; δ = 0.02; T_amb= 25 °C

100

180

5. Pinning information

Table 2. Pinning information

Symbol

Description

base

Simplified outline

Graphic symbol

collector

emitter

collector

sym028

SC-73 (SOT223)

12 3 4 5 6 7...12

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