Precision Resistor Type PBH
Spec Sheet R371-1/2 July 97
Technical Data
Resistance range
2 mOhm - 100 Ohm
1 %, 5 %
Tolerances
Temperature coefficient ( R > 20 mOhm )
Applicable temperature range
Load capacity
< 50 ppm/K ( 20 °C to 60 °C )
-55 °C to +125 °C
3 W / 10 W with heatsink provided
Rth < 4 K/W
Thermal resistance to aluminum base plate
Thermal resistance to ambiente
Dielectric withstanding voltage
Inductance ( R = 100 mOhm )
Stability ( nominal load at 70 °C )
Rth < 20 K/W
500 V AC
< 20 nH
deviation < 0.5 % after 2,000 h
Remarks:
- Standard resistance values according to E12 with the additionel values of 2 and 5
- Minimum quantity of other values on request
- Tolerance 0.5% for values of 10 mOhm up
The Resistor type PBH, which is very similar to type
willriseonlylittleatanominalloadof10W, comparedwith
TO 247 for high power transistors, features small customary resistors. This again results that the absolute
dimensions complemented with high load capacity and resistancedeviationcausedbythetemperaturecoefficient,
compatibility with active components.
is very low under load and will serve for a good stability on
overloading.
The use of the precision resistance material MANGANIN
as well as optimization of conductor leads and resistance The resistor is ideally suited for applications in power
structure result in a low temperature coefficient, a long- electronic and control technique, as most applications at
term stability and low inductance.
inductiveloadingwillrequireoperationwithswitchedpower
regulating units.
The resistor is mounted through a center bore to the
heatsink, whereby the large area of the base plate will Short connection distances and small dimensions with
functionasanoptimumheattransfer.Thethermalresistance highloadingcapacityandlowinductanceareaprerequisite
between resistor layer and aluminum base plate is rated for obtaining high switching frequencies.
below 4 K/W, so that the temperature of the resistor foil
∆R/R20 [%]
P / P Nenn
1
0.75
0.5
0.2
-40 -20
20
40
60
80 100 120
T [oC]
-0.2
-0.4
0.25
0
20
40
60
80
100
120
TG / [oC]
power derating curve
Temperature dependence of the electrical resistance
of ISA-PLAN Resistors
dR/R [%]
10 mΩ
2
5 mΩ
20 mΩ
1
-40 -20
20
40
60
80 100 120
T [oC]
>200 mΩ
100 mΩ
-1
-2
dimensions
( mm )
Change of the R(T)-curve to the TCR of copper terminals
for very low ohmic 2-terminal-resistors