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PB5010H PDF预览

PB5010H

更新时间: 2024-11-25 15:18:27
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
4页 224K
描述
PB

PB5010H 数据手册

 浏览型号PB5010H的Datasheet PDF文件第2页浏览型号PB5010H的Datasheet PDF文件第3页浏览型号PB5010H的Datasheet PDF文件第4页 
RoHS  
PB5010H  
COMPLIANT  
Bridge Rectifiers  
Features  
● UL recognition, file #E230084  
● Glass passivated chip junction  
● Thin single in-line package  
● High surge current capability  
● Solder dip 275 °C max. 7 s, per JESD 22-B106  
Typical Applications  
﹢ ﹣  
~ ~  
﹣ ﹢  
~
General purpose use in AC/DC bridge full wave rectification  
for switching power supply, home appliances, office equipment,  
industrial automation applications.  
~
Mechanical Data  
ackage: PB  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant, halogen-free  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
As marked on body  
Polarity:  
-
+
~
~
(T =25Unless otherwise specified  
Maximum Ratings  
a
PB5010H  
PARAMETER  
SYMBOL UNIT  
PB5010H  
1600  
Device marking code  
V
V
V
V
V
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
RRM  
RMS  
1120  
V
Maximum DC blocking Voltage  
1600  
DC  
With heatsink  
Average rectified output  
Tc =90℃  
50.0  
4.5  
I
current @60Hz sine  
Without heatsink  
O
A
A
wave, R-load,  
Ta =25℃  
Forward Surge Current (Non-repetitive)  
@60Hz Half-sine wave,1 cycle, Tj=25℃  
Forward Surge Current (Non-repetitive)  
500  
I
FSM  
I2t  
1000  
@1ms, square wave, 1 cycle, Tj=25℃  
Current squared time  
@1ms≤t≤8.3ms Tj=25, Rating of per diode  
A2s  
1037.5  
T
stg  
Storage temperature  
-55 ~ +150  
T
j
Junction temperature  
-55 ~ +150  
Dielectric strength  
@ Terminals to case, AC 1 minute  
Mounting torque  
@Recommend torque5kgꞏcm  
V
KV  
dis  
2.5  
8
Tor  
kgꞏcm  
T =25Unless otherwise specified)  
Electrical Characteristics  
a
PB5010H  
PARAMETER  
SYMBOL  
UNIT TEST CONDITIONS  
Maximum instantaneous  
forward voltage drop per diode  
V
V
1.1  
5
F
I
=25.0A  
FM  
Maximum DC reverse current  
at rated DC blocking voltage  
per diode  
T =25℃  
j
I
μA  
R
1000  
T =125℃  
j
Measured at 1MHz  
Typical junction capacitance  
Cj  
pF and Applied Reverse  
Voltage of 4.0 V.D.C  
195  
1 / 4  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-B2829  
Rev.1.0,09-Dec-22  
www.21yangjie.com  

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