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OH10003HR PDF预览

OH10003HR

更新时间: 2024-02-28 22:47:48
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 51K
描述
Sensor/Transducer, Single-ended, GAAS, 4 Pin, Plastic/epoxy

OH10003HR 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.92
JESD-609代码:e0安装特点:SURFACE MOUNT
端子数量:4最高工作温度:125 °C
最低工作温度:-30 °C输出:SINGLE-ENDED
输出电路类型:SINGLE-ENDED封装主体材料:PLASTIC/EPOXY
封装等效代码:TSOP4/6,.11,37封装形状/形式:RECTANGULAR
传感器/换能器类型:MAGNETIC FIELD SENSOR,HALL EFFECT子类别:Other Sensors
表面贴装:YES技术:GAAS
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

OH10003HR 数据手册

 浏览型号OH10003HR的Datasheet PDF文件第2页 
GaAs Hall Devices  
OH10003  
GaAs Hall Device  
Magnetic sensor  
I Features  
Unit : mm  
2.8 + 00..32  
1.5 + 00..32  
0.65 0.15  
0.65 0.15  
Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T)  
Input resistance: typ. 0.85 kΩ  
Satisfactory linearity of GaAs hall voltage with respect to the  
magnetic field  
Small temperature coefficient of the hall voltage: β ≤ − 0.06%/°C  
Sealed in the Mini type (4-pin) package. Allowing automatic  
insertion through the taping and the magazine package.  
0.5 R  
4
3
1
2
I Applications  
Various hall motor (VCR, phonograph, VD, CD, and FDD)  
Automotive equipment  
Industrial equipment  
0.4 0.2  
1 : VH Output (−) side  
2 : VC Input (−) side  
3 : VH Output (+) side  
4 : VC Input (+) side  
Applicable to wide-varying field (OA equipment, etc.)  
I Absolute Maximum Ratings Ta = 25°C  
Mini Type Package (4-pin)  
Parameter  
Control voltage  
Symbol  
VC  
Rating  
12  
Unit  
V
Marking Symbol: 3  
Power dissipation  
PD  
150  
mW  
°C  
Operating ambient temperature  
Storage temperature  
Topr  
Tstg  
30 to +125  
55 to +125  
°C  
I Electrical Characteristics Ta = 25°C  
Parameter  
Symbol  
VH  
Conditions  
Min  
130  
Typ  
150  
Max  
170  
12  
Unit  
mV  
%
1, 4  
Hall voltage*  
VC = 6 V, B = 0.1 T  
VC = 6 V, B = 0 T/B = 0.1 T  
IC = 1 mA, B = 0 T  
2, 4  
Unequilibrium ratio*  
VHO/VH  
RIN  
Input resistance  
0.50 0.852  
kΩ  
Output resistance  
ROUT  
β
IC = 1 mA, B = 0 T  
5
kΩ  
Temperature coefficient of hall voltage  
IC = 6 mA, B = 0.1 T  
IC = 1 mA, B = 0 T  
0.06  
0.3  
%/°C  
%/°C  
Temperature coefficient of input  
resistance  
α
3
Linearity of hall voltage*  
γ
IC = 6 mA, B = 0.1 T/0.5 T  
2
%
VH++VH  
1
Note)  
*
: VH =  
2
2
3
*
*
: Unequilibrium ratio is a percentage of VHO with respect to VH.  
: The linearity γ of VH is a percentage of a difference between cumulative sensitivity of KH1 and KH5 which are  
measured respectively at B = 0.1 T and 0.5 T to their average. That is,  
KH5KH1  
1/2(KH1+KH5  
VH  
γ =  
(the cumulative sensitivity KH  
=
)
)
ICB  
4
*
: VH, VHO/VH rank classification  
Class  
VH (mV)  
HQ  
HR  
IQ  
IR  
KQ  
KR  
130 to 158 142 to 170 130 to 158 142 to 170 130 to 158 142 to 170  
5 to +5 +2 to +12 2 to 12  
3HQ 3IR 3KQ 3KR  
VHO/VH (%)  
Marking Symbol  
3HR  
3IQ  
1

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