5秒后页面跳转
MA24D50 PDF预览

MA24D50

更新时间: 2024-01-09 18:00:19
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管
页数 文件大小 规格书
2页 242K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, Silicon, TMINIP2-F1, 2 PIN

MA24D50 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PDSO-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.82应用:POWER
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-F2
最大非重复峰值正向电流:60 A元件数量:1
相数:1端子数量:2
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大反向恢复时间:0.033 µs表面贴装:YES
技术:SCHOTTKY端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MA24D50 数据手册

 浏览型号MA24D50的Datasheet PDF文件第2页 
Newly-developed thin package enables producing slim-electronics products  
2A/3A type Schottky Barrier Diode MA24D50/60  
„ Overview  
This newly developed 2A/3A type schottky barrier diode is suitable  
for on-board power supplies and power unit of mobile devices. As  
the height (h) of the package was decreased by sixty percent of the  
conventional NMiniP2 package, it will drastically contribute to the  
downsizing of the customer's set-products.  
Unit : mm  
2.40 0.10  
0.15 0.05  
1
„ Feature  
With its unique wireless bonding structure, assures high surge  
resistance (IFSM=60A)  
2
1.75 0.05  
y Newly developed low-height package.  
NMiniP2h<2.15mm max TMiniP2:h<0.9mm max.  
5˚  
„ Applications  
High-frequency wave rectification of switching power supplies  
Prevention of reverse current from the batteries in the mobile devices  
TMiniP2-F1  
„ Main Specifications  
y Absolute Maximum Rating (Ta=25)  
Parameter  
Symbol  
VR  
Rating  
Unit  
V
Reverse voltage  
40  
Peak reverse voltage  
Forward current (Average)  
VRM  
40  
V
MA24D60  
MA24D50  
IF(AV)  
2
A
3
60  
A
Non-repetitive peak forward surge current*1  
Junction temperature  
IFSM  
Tj  
A
150  
Storage temperature  
Tstg  
-40 to +150  
Note*1 : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)  
y Electrical Characteristics (Ta=25)  
Part Number  
Forward voltage  
VF (max) at IF (AV)  
Reverse current  
IR (max) at VR=40V  
Terminal capacitance  
Ct (typ)  
Type  
MA24D60  
MA24D50  
0.48 V  
0.51 V  
200 µA  
200 µA  
90 pF  
Low VF / Low IR  
Low VF / Low IR  
105 pF  
Products and specifications are subject to change without notice.  
Please ask for the latest Product Standards to guarantee the satisfaction  
of your product requirements.  
,
1 Kotari-yakemachi, Nagaokakyo, Kyoto 617-8520, Japan  
Tel. +81-75-951-8151  
New publication, effective from 18 Nov. 2005  
M00711AE  
http://panasonic.co.jp/semicon  

与MA24D50相关器件

型号 品牌 描述 获取价格 数据表
MA24D51 PANASONIC Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, ROHS COMPLIANT, TM

获取价格

MA24D54 PANASONIC Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, Silicon, TMINIP2-F1, 2 PIN

获取价格

MA24D58 PANASONIC Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, Silicon, ROHS COMPLIANT, TMINIP2-F1, 2

获取价格

MA24D60 PANASONIC Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 40V V(RRM), Silicon, ROHS COMPLIANT, TM

获取价格

MA24D61 PANASONIC Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, Silicon, TMINIP2-F1, 2 PIN

获取价格

MA24D62 PANASONIC Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, Silicon, ROHS COMPLIANT, TMINIP2-F1, 2

获取价格