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DSA2001S0L

更新时间： 2024-02-20 01:50:15
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
4页 786K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN

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DSA2001S0L 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PINReach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：7.77最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE
最小直流电流增益 (hFE)：290JEDEC-95代码：TO-236AA
JESD-30 代码：R-PDSO-G3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
表面贴装：YES端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：150 MHzBase Number Matches：1

DSA2001S0L 数据手册

 浏览型号DSA2001S0L的Datasheet PDF文件第2页浏览型号DSA2001S0L的Datasheet PDF文件第3页浏览型号DSA2001S0L的Datasheet PDF文件第4页 
DSA2001  
Silicon PNP epitaxial planar type  
For general amplification  
Complementary to DSC2001  
Unit: mm  
Features  
High forward current transfer ratio hFE with excellent linearity  
Low collector-emitter saturation voltage VCE(sat)  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  
Marking Symbol: A1  
Packaging  
DSA2001×0L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
–60  
Unit  
V
1: Base  
2: Emitter  
3: Collector  
Panasonic  
JEITA  
–50  
V
Mini3-G3-B  
–7  
V
SC-59A  
–100  
mA  
mA  
mW  
°C  
Code  
TO-236AA/SOT-23  
Peak collector current  
ICP  
–200  
Collector power dissipation  
Junction temperature  
PC  
200  
Tj  
150  
Operating ambient temperature  
Storage temperature  
Topr  
–40 to +85  
–55 to +150  
°C  
T
stg  
°C  
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
–60  
–50  
–7  
Typ  
Max  
Unit  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
VCBO IC = –10 mA, IE = 0  
VCEO IC = –2 mA, IB = 0  
VEBO IE = –10 mA, IC = 0  
V
V
V
ICBO  
ICEO  
hFE  
VCB = –20 V, IE = 0  
VCE = –10 V, IB = 0  
VCE = –10 V, IC = –2 mA  
– 0.1  
–100  
460  
mA  
mA  
1
Forward current transfer ratio *  
210  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = –100 mA, IB = –10 mA  
– 0.2  
150  
– 0.5  
V
fT  
VCE = –10 V, IC = –2 mA  
MHz  
Collector output capacitance  
Cob  
VCB = –10 V, IE = 0, f = 1 MHz  
2
pF  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. 1: Rank classification  
*
Code  
Rank  
R
R
S
S
0
No-rank  
210 to 460  
A1  
hFE  
210 to 340  
A1R  
290 to 460  
A1S  
Marking Symbol  
Product of no-rank is not classified and have no marking symbol for rank.  
Publication date: February 2014  
Ver. DED  
1
1234

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