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DA2S101 PDF预览

DA2S101

更新时间: 2024-02-16 22:03:49
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
4页 356K
描述
Silicon epitaxial planar type

DA2S101 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PDSO-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.60
风险等级:5.75配置:SINGLE
最大二极管电容:2 pF二极管元件材料:SILICON
二极管类型:MIXER DIODE最大正向电压 (VF):1.2 V
频带:VERY HIGH FREQUENCYJESD-30 代码:R-PDSO-F2
最大非重复峰值正向电流:0.5 A元件数量:1
端子数量:2最高工作温度:150 °C
最大输出电流:0.1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:80 V最大反向恢复时间:0.003 µs
子类别:Rectifier Diodes表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DA2S101 数据手册

 浏览型号DA2S101的Datasheet PDF文件第2页浏览型号DA2S101的Datasheet PDF文件第3页浏览型号DA2S101的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DA2S101  
Silicon epitaxial planar type  
For high speed switching circuits  
DA2J101 in SSMini2 type package  
Features  
Package  
Small reverse current IR  
Code  
Short reverse recovery time trr  
SSMini2-F5-B  
Pin Name  
1: Cathode  
2:Anode  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
Packaging  
Marking Symbol: A1  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
VR  
Rating  
80  
Unit  
V
Reverse voltage  
Maximum peak reverse voltage  
Forward current  
VRM  
IF  
80  
V
100  
mA  
mA  
mA  
°C  
Peak forward current  
IFM  
225  
Non-repetitive peak forwardsurgecurrent*  
Junction temperature  
IFSM  
Tj  
500  
150  
Storage temperature  
T
stg  
–55 to +150  
°C  
Note) : 1 t = 1 s  
*
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
V
Forward voltage  
Reverse voltage  
Reverse current  
VF  
VR  
IR  
IF = 100 mA  
IR = 100 mA  
VR = 80 V  
0.92  
1.20  
80  
V
100  
1.2  
3
nA  
pF  
ns  
Terminal capacitance  
Ct  
VR = 0 V, f = 1 MHz  
Reverse recovery time *  
trr  
IF = 10 mA, VR = 6 V, Irr = 0.25 × IR  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
2. Absolute frequency of input and output is 100 MHz  
3. : trr measurement circuit  
*
Input Pulse  
tp  
Output Pulse  
trr  
Bias Application Unit (N-50BU)  
tr  
t
10%  
IF  
t
A
90%  
VR  
I
rr = 0.25 ×  
F = 10 mA  
VR = 6 V  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
I
Pulse Generator  
(PG-10N)  
Rs = 50 Ω  
Wave Form Analyzer  
(SAS-8130)  
Ri = 50 Ω  
Publication date: November 2010  
Ver. DED  
1

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