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2SK0664 PDF预览

2SK0664

更新时间: 2024-02-29 07:31:55
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
3页 76K
描述
For Switching

2SK0664 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.84配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:50 V最大漏极电流 (ID):0.1 A
最大漏源导通电阻:50 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):1 pFJESD-30 代码:R-PDSO-F3
JESD-609代码:e6湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK0664 数据手册

 浏览型号2SK0664的Datasheet PDF文件第2页浏览型号2SK0664的Datasheet PDF文件第3页 
Silicon MOS FETs (Small Signal)  
2SK0664 (2SK664)  
Silicon N-Channel MOS FET  
unit: mm  
+0.10  
0.05  
+0.1  
0.0  
0.15  
0.3  
For switching  
3
I Features  
G High-speed switching  
G S-mini type package, allowing downsizing of the sets and auto-  
matic insertion through the tape/magazine packing.  
1
2
(0.65) (0.65)  
1.3±0.1  
2.0±0.2  
10°  
I Absolute Maximum Ratings (Ta = 25°C)  
Parameter  
Symbol  
Ratings  
Unit  
V
Drain to Source breakdown voltage VDSS  
50  
1: Gate  
2: Source  
3: Drain  
Gate to Source voltage  
Drain current  
VGSO  
ID  
8
100  
V
EIAJ: SC-70  
SMini3-G1 Package  
mA  
mA  
mW  
°C  
Max drain current  
IDP  
PD  
200  
Marking Symbol: 3N  
Internal Connection  
Allowable power dissipation  
Channel temperature  
Storage temperature  
150  
Tch  
Tstg  
150  
D
55 to +150  
°C  
G
S
I Electrical Characteristics (Ta = 25°C)  
Parameter  
Symbol  
IDSS  
Conditions  
min  
typ  
max  
10  
Unit  
µA  
µA  
V
Drain to Source cut-off current  
Gate to Source leakage current  
VDS = 10V, VGS = 0  
IGSS  
VGS = 8V, VDS = 0  
50  
Drain to Source breakdown voltage VDSS  
ID = 100µA, VGS = 0  
50  
Gate threshold voltage  
Vth  
ID = 100µA, VDS = VGS  
ID = 20mA, VGS = 5V  
ID = 20mA, VDS = 5V, f = 1kHz  
1.5  
3.5  
50  
V
Drain to Source ON-resistance  
Forward transfer admittance  
RDS(on)  
| Yfs |  
20  
mS  
pF  
pF  
pF  
ns  
Input capacitance (Common Source) Ciss  
Output capacitance (Common Source) Coss  
15  
5
VDS = 5V, VGS = 0, f = 1kHz  
Reverse transfer capacitance (Common Source) Crss  
*
1
Turn-on time  
Turn-off time  
ton  
VDD = 5V, VGS = 0 to 5V, RL = 200  
VDD = 5V, VGS = 5 to 0V, RL = 200Ω  
10  
20  
*
toff  
ns  
* ton, toff measurement circuit  
Vout  
200  
90%  
10%  
Vin  
VGS = 5V  
VDD = 5V  
Vout  
10%  
90%  
50Ω  
ton  
toff  
Note) The part number in the parenthesis shows conventional part number.  
289  

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