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2SK0663 PDF预览

2SK0663

更新时间: 2024-02-22 02:27:55
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
3页 74K
描述
For Low-Frequency Amplification

2SK0663 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.82配置:SINGLE
最小漏源击穿电压:55 V最大漏极电流 (ID):0.03 A
FET 技术:JUNCTIONJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON

2SK0663 数据手册

 浏览型号2SK0663的Datasheet PDF文件第2页浏览型号2SK0663的Datasheet PDF文件第3页 
Silicon Junction FETs (Small Signal)  
2SK0663 (2SK663)  
Silicon N-Channel Junction FET  
For low-frequency amplification  
For switching  
unit: mm  
+0.10  
–0.05  
+0.1  
–0.0  
0.15  
0.3  
3
I Features  
G Low noise-figure (NF)  
G High gate to drain voltage VGDO  
G S-mini type package, allowing downsizing of the sets and auto-  
matic insertion through the tape/magazine packing.  
1
2
(0.65) (0.65)  
1.3±0.1  
2.0±0.2  
10°  
I Absolute Maximum Ratings (Ta = 25°C)  
Parameter  
Drain to Source voltage  
Gate to Drain voltage  
Gate to Source voltage  
Drain current  
Symbol  
VDSX  
VGDO  
VGSO  
ID  
Ratings  
Unit  
V
55  
55  
V
1: Source  
2: Drain  
3: Gate  
55  
V
EIAJ: SC-70  
SMini3-G1 Package  
30  
mA  
mA  
mW  
°C  
Gate current  
IG  
10  
Marking Symbol (Example): 2B  
Allowable power dissipation  
Junction temperature  
Storage temperature  
PD  
150  
Tj  
125  
Tstg  
55 to +125  
°C  
I Electrical Characteristics (Ta = 25°C)  
Parameter  
Symbol  
Conditions  
min  
typ  
max  
12  
Unit  
mA  
nA  
V
*
Drain to Source cut-off current  
Gate to Source leakage current  
Gate to Drain voltage  
IDSS  
VDS = 10V, VGS = 0  
VGS = 30V, VDS = 0  
G = 100µA, VDS = 0  
1
IGSS  
VGDS  
VGSC  
gm  
10  
I
55  
80  
Gate to Source cut-off voltage  
Mutual conductance  
VDS = 10V, ID = 10µA  
5  
V
VDS = 10V, ID = 5mA, f = 1kHz  
2.5  
7.5  
6.5  
1.9  
mS  
pF  
Input capacitance (Common Source) Ciss  
VDS = 10V, VGS = 0, f = 1MHz  
Reverse transfer capacitance (Common Source) Crss  
pF  
VDS = 10V, VGS = 0, Rg = 100kΩ  
Noise figure  
NF  
2.5  
dB  
f = 100Hz  
* IDSS rank classification  
Runk  
P
Q
R
IDSS (mA)  
1 to 3  
2BP  
2 to 6.5  
2BQ  
5 to 12  
2BR  
Marking Symbol  
Note) The part number in the parenthesis shows conventional part number.  
253  

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