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2SK0662 PDF预览

2SK0662

更新时间: 2024-01-06 09:36:39
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 78K
描述
Silicon N-Channel Junction FET

2SK0662 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.84其他特性:LOW NOISE
配置:SINGLE最小漏源击穿电压:30 V
最大漏极电流 (ID):0.02 AFET 技术:JUNCTION
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2SK0662 数据手册

 浏览型号2SK0662的Datasheet PDF文件第2页浏览型号2SK0662的Datasheet PDF文件第3页 
Silicon Junction FETs (Small Signal)  
2SK0662 (2SK662)  
Silicon N-Channel Junction FET  
For low-frequency amplification  
unit: mm  
+0.10  
0.05  
+0.1  
0.0  
0.15  
0.3  
Features  
High mutual conductance gm  
3
Low noise type  
S-mini type package, allowing downsizing of the sets and auto-  
matic insertion through the tape/magazine packing.  
1
2
(0.65) (0.65)  
1.3±0.1  
2.0±0.2  
Absolute Maximum Ratings (Ta = 25°C)  
10°  
Parameter  
Drain to Source voltage  
Gate to Drain voltage  
Drain current  
Symbol  
VDSX  
VGDO  
ID  
Ratings  
Unit  
V
30  
30  
V
20  
mA  
mA  
mW  
°C  
1: Source  
2: Drain  
3: Gate  
EIAJ: SC-70  
SMini3-G1 Package  
Gate current  
IG  
10  
Allowable power dissipation  
Junction temperature  
Storage temperature  
PD  
150  
Marking Symbol (Example): 1O  
Tj  
125  
Tstg  
55 to +125  
°C  
❘ꢀ Electrical Characteristics (Ta = 25°C)  
Parameter  
Symbol  
Conditions  
min  
typ  
max  
12  
Unit  
mA  
nA  
V
*
Drain to Source cut-off current  
Gate to Source leakage current  
Gate to Source cut-off voltage  
IDSS  
VDS = 10V, VGS = 0  
0.5  
IGSS  
VGS = 30V, VDS = 0  
100  
1.5  
VGSC  
VDS = 10V, ID = 10µA  
0.1  
VDS = 10V, ID = 0.5mA, f = 1kHz  
VDS = 10V, VGS = 0, f = 1kHz  
4
4
Mutual conductance  
gm  
mS  
Input capacitance (Common Source) Ciss  
14  
p F  
p F  
VDS = 10V, VGS = 0, f = 1MHz  
Reverse transfer capacitance (Common Source) Crss  
3.5  
VDS = 30V, ID = 1mA, GV = 80dB  
Noise figure  
NV  
60  
mV  
Rg = 100k, Function = FLAT  
* IDSS rank classification  
Runk  
P
Q
R
IDSS (mA)  
0.5 to 3  
1OP  
2 to 6  
1OQ  
4 to 12  
1OR  
Marking Symbol  
Note) The part number in the parenthesis shows conventional part number.  
251  

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