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2SK0601 PDF预览

2SK0601

更新时间: 2024-01-26 12:51:12
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号场效应晶体管开关
页数 文件大小 规格书
2页 37K
描述
Silicon N-Channel MOS FET

2SK0601 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
配置:SINGLE最小漏源击穿电压:80 V
最大漏极电流 (ID):0.5 A最大漏源导通电阻:4 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-F3
JESD-609代码:e6湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK0601 数据手册

 浏览型号2SK0601的Datasheet PDF文件第2页 
Silicon MOS FETs (Small Signal)  
2SK601  
Silicon N-Channel MOS FET  
For switching  
unit: mm  
1.5±0.1  
4.5±0.1  
1.6±0.2  
Features  
Low ON-resistance RDS(on)  
High-speed switching  
Allowing to be driven directly by CMOS and TTL  
Mini-power type package, allowing downsizing of the sets and  
automatic insertion through the tape/magazine packing.  
45˚  
0.4±0.08  
0.4±0.04  
0.5±0.08  
1.5±0.1  
Absolute Maximum Ratings (Ta = 25°C)  
3.0±0.15  
2
Parameter  
Drain to Source voltage  
Gate to Source voltage  
Drain current  
Symbol  
VDS  
Ratings  
Unit  
V
3
1
80  
VGSO  
ID  
20  
V
1: Gate  
2: Drain  
marking  
±0.5  
A
3: Source  
EIAJ: SC-62  
Max drain current  
IDP  
±1  
A
*
Mini-Power Type Package (3-pin)  
Allowable power dissipation  
Channel temperature  
Storage temperature  
PD  
1
W
°C  
°C  
Tch  
150  
Marking Symbol: O  
Tstg  
55 to +150  
* PC board: Copper foil of the drain portion should have a area of 1cm2 or  
more and the board thickness should be 1.7mm.  
Electrical Characteristics (Ta = 25°C)  
Parameter  
Symbol  
IDSS  
Conditions  
VDS = 60V, VGS = 0  
min  
typ  
max  
10  
Unit  
µA  
µA  
V
Drain to Source cut-off current  
Gate to Source leakage current  
IGSS  
VGS = 20V, VDS = 0  
0.1  
Drain to Source breakdown voltage VDSS  
IDS = 100µA, VGS = 0  
ID = 1mA, VDS = VGS  
ID = 0.5A, VGS = 10V  
ID = 0.2A, VDS = 15V, f = 1kHz  
80  
Gate threshold voltage  
Vth  
1.5  
3.5  
4
V
1
*
Drain to Source ON-resistance  
Forward transfer admittance  
RDS(on)  
| Yfs |  
2
300  
45  
30  
8
mS  
pF  
pF  
pF  
ns  
Input capacitance (Common Source) Ciss  
Output capacitance (Common Source) Coss  
Reverse transfer capacitance (Common Source) Crss  
VDS = 10V, VGS = 0, f = 1MHz  
2
*
Turn-on time  
Turn-off time  
ton  
15  
20  
2
*
toff  
ns  
1 Pulse measurement  
*
2 ton, toff measurement circuit  
*
10%  
Vout  
Vin  
Vin  
10%  
68  
Vin = 10V  
90%  
90%  
Vout  
Vout  
VDD = 30V  
t = 1µS  
f = 1MHZ  
50Ω  
ton  
toff  
1

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