5秒后页面跳转
2SJ164 PDF预览

2SJ164

更新时间: 2024-02-04 18:44:21
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号场效应晶体管开关
页数 文件大小 规格书
2页 33K
描述
Silicon P-Channel Junction FET

2SJ164 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.92
其他特性:LOW NOISE配置:SINGLE
最大漏极电流 (ID):0.02 AFET 技术:JUNCTION
JESD-30 代码:R-PSIP-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:FET General Purpose Small Signal
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SJ164 数据手册

 浏览型号2SJ164的Datasheet PDF文件第2页 
Silicon Junction FETs (Small Signal)  
2SJ164  
Silicon P-Channel Junction FET  
For switching  
unit: mm  
4.0±0.2  
Complementary to 2SK1104  
Features  
Low ON-resistance  
Low-noise characteristics  
Absolute Maximum Ratings (Ta = 25°C)  
marking  
Parameter  
Gate to Drain voltage  
Drain current  
Symbol  
VGDS  
ID  
Ratings  
65  
Unit  
V
1
2
3
20  
mA  
mA  
mW  
°C  
Gate current  
IG  
10  
1.27 1.27  
1: Source  
2: Gate  
2.54±0.15  
Allowable power dissipation  
Channel temperature  
Storage temperature  
PD  
300  
3: Drain  
EIAJ: SC-72  
New S Type Package  
Tch  
150  
Tstg  
55 to +150  
°C  
Electrical Characteristics (Ta = 25°C)  
Parameter  
Symbol  
Conditions  
VDS = 10V, VGS = 0  
min  
typ  
max  
6  
Unit  
mA  
nA  
V
*
Drain to Source cut-off current  
Gate to Source leakage current  
Gate to Drain voltage  
IDSS  
0.2  
IGSS  
VGS = 30V, VDS = 0  
10  
VGDS  
VGSC  
| Yfs |  
RDS(on)  
IG = 10µA, VDS = 0  
65  
Gate to Source cut-off voltage  
Forward transfer admittance  
Drain to Source ON-resistance  
VDS = 10V, ID = 10µA  
VDS = 10V, ID = 1mA, f = 1kHz  
VDS = 10mV, VGS = 0  
1.5  
2.5  
300  
10  
3
3.5  
V
1.8  
mS  
Input capacitance (Common Source) Ciss  
Output capacitance (Common Source) Coss  
Reverse transfer capacitance (Common Source) Crss  
pF  
pF  
pF  
VDS = 10V, VGS = 0, f = 1MHz  
3
* IDSS rank classification  
Runk  
O
P
Q
R
IDSS (mA)  
0.2 to 1 0.6 to 1.5  
1 to 3  
2.5 to 6  
1

与2SJ164相关器件

型号 品牌 描述 获取价格 数据表
2SJ164Q PANASONIC Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, P-Channel, Silicon, Junction

获取价格

2SJ165 NEC P-CHANNEL MOS FET FOR SWITCHING

获取价格

2SJ165-A NEC Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, P-Channel, Silicon, Metal

获取价格

2SJ166 NEC P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

获取价格

2SJ166 KEXIN MOS Fied Effect Transistor

获取价格

2SJ166-A RENESAS 100mA, 50V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIMOLD, SC-59, 3 PIN

获取价格