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2SJ0536 PDF预览

2SJ0536

更新时间: 2024-01-13 03:59:46
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
2页 34K
描述
Silicon P-Channel MOS FET

2SJ0536 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.82Is Samacsys:N
配置:SINGLE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):0.1 A最大漏极电流 (ID):0.1 A
最大漏源导通电阻:75 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G3JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SJ0536 数据手册

 浏览型号2SJ0536的Datasheet PDF文件第2页 
Silicon MOS FETs (Small Signal)  
2SJ0536  
Silicon P-Channel MOS FET  
Secondary battery pack (Li ion battery, etc.)  
For switching  
unit: mm  
2.1±0.1  
0.425  
1.25±0.1  
0.425  
Features  
High-speed switching  
1
S-mini type package, allowing downsizing of the sets and auto-  
matic insertion through the tape/magazine packing.  
Low-voltage drive (Vth: 1 to 2V)  
Low Ron  
3
2
Absolute Maximum Ratings (Ta = 25°C)  
Parameter  
Drain to Source voltage  
Gate to Source voltage  
Drain current  
Symbol  
VDS  
VGSO  
ID  
Ratings  
30  
Unit  
V
0.2±0.1  
±20  
V
1: Gate  
2: Source  
3: Drain  
EIAJ: SC-70  
S-Mini Type Package (3-pin)  
100  
mA  
mA  
mW  
°C  
Max drain current  
IDP  
200  
Marking Symbol: 2C  
Allowable power dissipation  
Channel temperature  
Storage temperature  
PD  
150  
Tch  
150  
Tstg  
55 to +150  
°C  
Electrical Characteristics (Ta = 25°C)  
Parameter  
Drain current  
Symbol  
IDSS  
Conditions  
min  
typ  
max  
0.1  
±1  
Unit  
µA  
µA  
V
VDS = 30V, VGS = 0  
Gate cut-off current  
Gate threshold voltage  
Forward transfer admittance  
Drain to source ON-resistance  
Turn-on time  
IGSS  
VGS = ±20V, VDS = 0  
Vth  
VDS = 5V, ID = 1µA  
1  
2  
| Yfs |  
RDS(on)  
ton  
VDS = 5V, ID = 10mA  
8
mS  
VGS = 5V, ID = 10mA  
50  
100  
25  
75  
VDD = 5V, VGS = 5 to 0V, RL = 200Ω  
VDD = 5V, VGS = 5 to 0V, RL = 200Ω  
µs  
Turn-off time  
toff  
µs  
1

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