Transistor
2SA1531, 2SA1531A
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SC3929 and 2SC3929A
Unit: mm
Features
Low noise voltage NV.
■
2.1±0.1
●
0.425
1.25±0.1
0.425
●
High foward current transfer ratio hFE
.
●
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
1
3
2
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
2SA1531
Symbol
Ratings
–35
Unit
Collector to
VCBO
V
base voltage
Collector to
2SA1531A
2SA1531
–55
–35
VCEO
V
0.2±0.1
2SA1531A
emitter voltage
–55
Emitter to base voltage
Peak collector current
Collector current
VEBO
ICP
IC
–5
V
mA
mA
mW
˚C
–100
–50
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Collector power dissipation
Junction temperature
Storage temperature
PC
150
Tj
150
(2SA1531)
Marking symbol : F
(2SA1531A)
Tstg
–55 ~ +150
˚C
H
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
–100
–1
Unit
nA
VCB = –10V, IE = 0
Collector cutoff current
ICEO
VCE = –10V, IB = 0
µA
Collector to base
voltage
2SA1531
2SA1531A
–35
–55
–35
–55
–5
VCBO
IC = –10µA, IE = 0
V
Collector to emitter 2SA1531
VCEO
VEBO
IC = –2mA, IB = 0
V
V
voltage
2SA1531A
Emitter to base voltage
IE = –10µA, IC = 0
*1
Forward current transfer ratio
hFE
VCE = –5V, IC = –2mA
180
700
– 0.6
–1.0
Collector to emitter saturation voltage VCE(sat)
IC = –100mA, IB = –10mA*2
VCE = –1V, IC = –100mA*2
VCB = –10V, IE = 2mA, f = 200MHz
VCE = –10V, IC = –1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
V
V
Base to emitter voltage
Transition frequency
VBE
fT
– 0.7
80
MHz
Noise voltage
NV
150
mV
*2 Pulse measurement
*1
h
Rank classification
FE1
Rank
hFE
R
S
T
180 ~ 360
FR
260 ~ 520
FS
360 ~ 700
FT
2SA1531
Marking
Symbol
2SA1531A
HR
HS
HT
1