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2SA1495QY PDF预览

2SA1495QY

更新时间: 2024-01-26 00:11:29
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
4页 178K
描述
Power Bipolar Transistor, 0.6A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, I-TYPE PACKAGE-4

2SA1495QY 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.84外壳连接:COLLECTOR
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):15 MHz
Base Number Matches:1

2SA1495QY 数据手册

 浏览型号2SA1495QY的Datasheet PDF文件第2页浏览型号2SA1495QY的Datasheet PDF文件第3页浏览型号2SA1495QY的Datasheet PDF文件第4页 
Power Transistors  
2SA1495  
Silicon PNP epitaxial planar type  
Unit: mm  
7.0±0.3  
3.0±0.2  
3.5±0.2  
For high-speed switching  
Features  
High foward current transfer ratio hFE  
1.1±0.1  
0.85±0.1  
0.4±0.1  
0.75±0.1  
High-speed switching  
High collector to base voltage VCBO  
.2  
I type package enabling direct soldering of the raiating in to  
the printed circuit board, etc. of small electronic eipment.  
4.6±0.4  
2
3
1:Base  
2:Collector  
3:Emitter  
I Type Package  
Absolute Maximum Ratings (T =2˚C)  
C
Parameter  
Symbol  
VCBO  
V
IC
ating
–40
–400  
–7  
Unit  
V
Unit: mm  
7.0±0.3  
3.5±0.2  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
2.0±0.2  
3.0±0.2  
0 to 0.15  
V
–1.2  
A
IC  
– 0.6  
5  
A
2.5  
Collector ower TC=25°C  
0.75±0.1  
0.5 max.  
0.9±0
1.1±0.1  
PC  
W
0 to 0.15  
dissipation  
Ta25°C  
1.3  
1
3
Junctiomperaure  
Storge teature  
Tj  
0  
˚C  
˚C  
1:Base  
2:Collect
Tstg  
to +150  
2.3±0.2  
3:Emitter  
40.4  
I Type Package (Y)  
Eectrical Characteristics (T =25˚C)  
C
Paramter  
Symbol  
ICBO  
Conditions  
mn  
typ  
max  
–100  
–100  
Unit  
µA  
µA  
V
Collecurre
Ent  
CB = –400V, IE = 0  
IO  
VEB = –7V, IC = 0  
Collecvoltage  
VCEO  
IC = –10mA, IB = 0  
VCE = –5V, IC = –100mA  
–400  
30  
*
hFE1  
160  
Forward currnt transfer ratio  
hFE2  
V
CE = –5V, IC = –300mA  
10  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
IC = –300mA, IB = –60mA  
IC = –300mA, IB = –60mA  
VCE = –10V, IC = –100mA, f = 1MHz  
IC = –300mA,  
–1.0  
–1.5  
V
V
Transition frequency  
Turn-on time  
Storage time  
Fall time  
fT  
ton  
tstg  
tf  
15  
MHz  
µs  
1.0  
3.5  
1.0  
IB1 = –60mA, IB2 = 60mA,  
VCC = –100V  
µs  
µs  
*hFE1 Rank classification  
Rank  
hFE1  
Q
P
O
30 to 60  
50 to 100  
80 to 160  
1

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