5秒后页面跳转
2SA1487 PDF预览

2SA1487

更新时间: 2024-01-07 00:21:27
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管放大器局域网
页数 文件大小 规格书
3页 48K
描述
SILICON PNP EPITAXIAL PLANER TYPE

2SA1487 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92L包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.92最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:85 V配置:SINGLE
最小直流电流增益 (hFE):60JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):500 MHz
Base Number Matches:1

2SA1487 数据手册

 浏览型号2SA1487的Datasheet PDF文件第2页浏览型号2SA1487的Datasheet PDF文件第3页 
Transistor  
2SA1487  
Silicon PNP epitaxial planer type  
For video amplifier  
Unit: mm  
5.9±0.2  
4.9±0.2  
Features  
High transition frequency fT.  
Small collector output capacitance Cob.  
0.7±0.1  
2.54±0.15  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
–85  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
0.45+00..12  
0.45+00..12  
–85  
V
1.27  
1.27  
–4  
V
1:Emitter  
–100  
–50  
mA  
mA  
W
2:Collector  
3:Base  
1
2
3
IC  
EIAJ:SC–51  
TO–92L Package  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
1
Tj  
150  
˚C  
˚C  
Tstg  
–55 ~ +150  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICEO  
Conditions  
min  
typ  
max  
Unit  
µA  
V
Collector cutoff current  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
VCE = –60V, IB = 0  
–10  
VCBO  
VCEO  
VEBO  
hFE  
IC = –100µA, IE = 0  
IC = 1mA, IB = 0  
–85  
–85  
–4  
V
IE = –100µA, IC = 0  
VCE = –5V, IC = –10mA  
IC = –10mA, IB = –1mA  
V
Forward current transfer ratio  
60  
Collector to emitter saturation voltage VCE(sat)  
– 0.5  
V
MHz  
pF  
Transition frequency  
fT  
V
CB = –5V, IE = 10mA, f = 200MHz  
500  
2.7  
Collector output capacitance  
Cob  
VCB = –10V, IE = 0, f = 1MHz  
1

与2SA1487相关器件

型号 品牌 描述 获取价格 数据表
2SA1488 SAVANTIC Silicon PNP Power Transistors

获取价格

2SA1488 SANKEN Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)

获取价格

2SA1488 ISC Silicon PNP Power Transistors

获取价格

2SA1488 JMNIC Silicon PNP Power Transistors

获取价格

2SA1488 NJSEMI Trans GP BJT PNP 60V 4A 3-Pin(3+Tab) TO-220F Bulk

获取价格

2SA1488_07 SANKEN Silicon PNP Epitaxial Planar Transistor

获取价格