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2SA1309A PDF预览

2SA1309A

更新时间: 2024-02-07 15:48:25
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管ISM频段放大器
页数 文件大小 规格书
2页 38K
描述
Silicon PNP epitaxial planer type

2SA1309A 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.59
最大集电极电流 (IC):0.1 A配置:Single
最小直流电流增益 (hFE):290最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
子类别:Other Transistors表面贴装:NO
Base Number Matches:1

2SA1309A 数据手册

 浏览型号2SA1309A的Datasheet PDF文件第2页 
Transistor  
2SA1309A  
Silicon PNP epitaxial planer type  
For low-frequency amplification  
Complementary to 2SC3311A  
Unit: mm  
4.0±0.2  
Features  
High foward current transfer ratio hFE  
.
Allowing supply with the radial taping.  
Optimum for high-density mounting.  
marking  
Absolute Maximum Ratings (Ta=25˚C)  
1
2
3
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
–60  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
1.27 1.27  
–50  
V
2.54±0.15  
–7  
V
–200  
–100  
300  
mA  
mA  
mW  
˚C  
1:Emitter  
2:Collector  
3:Base  
IC  
EIAJ:SC–72  
New S Type Package  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
–100  
–1  
Unit  
nA  
µA  
V
VCB = –10V, IE = 0  
Collector cutoff current  
ICEO  
VCE = –10V, IB = 0  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
VCBO  
VCEO  
VEBO  
IC = –10µA, IE = 0  
–60  
–50  
–7  
I
C = –2mA, IB = 0  
V
IE = –10µA, IC = 0  
V
*
Forward current transfer ratio  
hFE  
VCE = –10V, IC = –2mA  
160  
460  
Collector to emitter saturation voltage VCE(sat)  
I
C = –50mA, IB = –5mA  
– 0.3  
V
MHz  
pF  
Transition frequency  
fT  
VCB = –10V, IE = 1mA, f = 200MHz  
VCB = –10V, IE = 0, f = 1MHz  
80  
Collector output capacitance  
Cob  
3.5  
*hFE Rank classification  
Rank  
hFE  
Q
R
S
160 ~ 260  
210 ~ 340  
290 ~ 460  
1

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