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2SA1124 PDF预览

2SA1124

更新时间: 2024-02-27 05:41:52
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 39K
描述
Silicon PNP epitaxial planer type

2SA1124 技术参数

生命周期:Obsolete零件包装代码:TO-92L
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.83
Is Samacsys:N最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:150 V配置:SINGLE
最小直流电流增益 (hFE):260JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

2SA1124 数据手册

 浏览型号2SA1124的Datasheet PDF文件第2页 
Transistor  
2SA1124  
Silicon PNP epitaxial planer type  
For low-frequency high breakdown voltage amplification  
Complementary to 2SC2632  
Unit: mm  
5.9±0.2  
4.9±0.2  
Features  
Satisfactory foward current transfer ratio hFE collector current IC  
characteristics.  
High collector to emitter voltage VCEO  
.
0.7±0.1  
Small collector output capacitance Cob.  
Makes up a complementary pair with 2SC2632, which is opti-  
mum for the pre-driver stage of a 40 to 60W output amplifier.  
2.54±0.15  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
–150  
–150  
–5  
Unit  
V
0.45+–0.21  
0.45+00..12  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
1.27  
1.27  
1:Emitter  
2:Collector  
3:Base  
EIAJ:SC–51  
TO–92L Package  
V
1
2
3
V
–100  
–50  
mA  
mA  
W
IC  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
1
Tj  
150  
˚C  
˚C  
Tstg  
–55 ~ +150  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
Unit  
Collector cutoff current  
VCB = –100V, IE = 0  
C = –0.1mA, IB = 0  
–1  
µA  
V
Collector to emitter voltage  
Emitter to base voltage  
VCEO  
VEBO  
I
–150  
–5  
IE = –10µA, IC = 0  
V
*
Forward current transfer ratio  
hFE  
VCE = –5V, IC = –10mA  
130  
450  
–1  
Collector to emitter saturation voltage VCE(sat)  
IC = –30mA, IB = –3mA  
V
MHz  
pF  
Transition frequency  
fT  
VCB = –10V, IE = 10mA, f = 200MHz  
VCE = –10V, IE = 0, f = 1MHz  
200  
150  
Collector output capacitance  
Cob  
5
VCE = –10V, IC = –1mA, GV = 80dB  
Noise voltage  
NV  
300  
mV  
Rg = 100k, Function = FLAT  
*hFE Rank classification  
Rank  
hFE  
R
S
T
130 ~ 220  
185 ~ 330  
260 ~ 450  
1

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