Power Transistors
2SC2497, 2SC2497A
Silicon NPN epitaxial planar type
Unit: mm
+0.5
For low-frequency power amplification
8.0
–0.1
3.2 0.2
Complementary to 2SA1096 and 2SA1096A
φ 3.16 0.1
I Features
•
•
High collector to emitter voltage VCEO
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol
VCBO
Rating
Unit
V
0.75 0.1
4.6 0.2
0.5 0.1
2.3 0.2
0.5 0.1
1.76 0.1
Collector to base voltage
70
50
60
5
2SC2497
2SC2497A
VCEO
V
Collector to
1 : Emitter
2 : Collector
3 : Base
emitter voltage
1
2
3
Emitter to base voltage
Peak collector current
Collector current
VEBO
ICP
IC
V
A
TO-126B-A1 Package
3
1.5
A
1
Collector power dissipation
PC
1.2 *
W
2
5 *
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55 to +150
Note) 1: Without heat sink
*
2: With a 100 × 100 × 2 mm A1 heat sink
*
I Electrical Characteristics TC = 25°C
Parameter
Symbol
ICBO
Conditions
Min
Typ
Max
1
Unit
µA
µA
µA
V
Collector cutoff current
VCB = 20 V, IE = 0
VCE = 10 V, IB = 0
VEB = 5 V, IC = 0
IC = 1 mA, IE = 0
IC = 2 mA, IB = 0
ICEO
100
10
Emitter cutoff current
IEBO
Collector to base voltage
VCBO
VCEO
70
50
60
80
2SC2497
2SC2497A
V
Collector to emitter
voltage
Forward current transfer ratio *
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
hFE
VCE(sat)
VBE(sat)
fT
VCE = 5 V, IC = 1 A
220
1
IC = 1.5 A, IB = 0.15 A
IC = 1.5 A, IB = 0.15 A
V
V
1.5
VCB = 5 V, IE = − 0.5 A, f = 200 MHz
150
35
MHz
pF
Collector output capacitance
Cob
VCB = 20 V, IE = 0, f = 1 MHz
Note) : Rank classification
*
Rank
R
S
hFE
80 to 160
120 to 220
188