2SA1022

更新时间： 2024-01-22 22:59:58

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
2页	41K
描述
Silicon PNP epitaxial planer type

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2SA1022 数据手册

Transistor

2SA1022

Silicon PNP epitaxial planer type

For high-frequency amplification

Complementary to 2SC2295

Unit: mm

2.8 ⁺^–0⁰^.^.³²

1.5 –⁺0⁰.^.0²5⁵

0.65±0.15

Features

High transition frequency f_T.

■

0.65±0.15

●

Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

–30

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

0.1 to 0.3

–20

0.4±0.2

–5

–30

˚C

Collector power dissipation

Junction temperature

Storage temperature

P_C

200

1:Base

2:Emitter

JEDEC:TO–236

EIAJ:SC–59

T_j

150

3:Collector

Mini Type Package

T_stg

–55 ~ +150

˚C

Marking symbol : E

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

I_CEO

I_EBO

Conditions

min

typ

max

– 0.1

–100

–10

Unit

µA

V_CB= –10V, I_E= 0

Collector cutoff current

V_CE= –20V, I_B= 0

µA

Emitter cutoff current

V_EB= –5V, I_C= 0

µA

Forward current transfer ratio

h_FE

V_CE= –10V, I_C= –1mA

I_C= –10mA, I_B= –1mA

V_CE= –10V, I_C= –1mA

220

Collector to emitter saturation voltage V_CE(sat)

– 0.1

– 0.7

300

2.8

Base to emitter voltage

Transition frequency

Noise figure

V_BE

f_T

V_CB= –10V, I_E= 1mA, f = 200MHz

150

MHz

Ω

Z_rb

V_CB= –10V, I_E= 1mA, f = 5MHz

V_CB= –10V, I_E= 1mA, f = 2MHz

Reverse transfer impedance

Common emitter reverse transfer

capacitance

V_CE= –10V, I_C= –1mA

C_re

1.2

f = 10.7MHz

^*h_FERank classification

Rank

h_FE

70 ~ 140

110 ~ 220

Marking Symbol

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