5秒后页面跳转
2SA0838 PDF预览

2SA0838

更新时间: 2024-02-05 09:11:17
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 40K
描述
Silicon PNP epitaxial planer type

2SA0838 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
Is Samacsys:N最大集电极电流 (IC):0.03 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):110JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
最大功率耗散 (Abs):0.25 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzBase Number Matches:1

2SA0838 数据手册

 浏览型号2SA0838的Datasheet PDF文件第2页 
Transistor  
2SA838  
Silicon PNP epitaxial planer type  
For high-frequency amplification  
Complementary to 2SC1359  
Unit: mm  
4.0±0.2  
5.0±0.2  
Features  
High transition frequency fT.  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
–30  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
0.45+00..12  
0.45+00..12  
–20  
V
1.27  
1.27  
–5  
V
–30  
mA  
mW  
˚C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
250  
1 2 3  
1:Emitter  
Tj  
150  
2:Collector  
3:Base  
JEDEC:TO–92  
EIAJ:SC–43A  
2.54±0.15  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
ICEO  
IEBO  
Conditions  
min  
typ  
max  
Unit  
µA  
VCB = –10V, IE = 0  
– 0.1  
–100  
–10  
Collector cutoff current  
VCE = –20V, IB = 0  
Emitter cutoff current  
VEB = –5V, IC = 0  
µA  
*
Forward current transfer ratio  
hFE  
VCE = –10V, IC = –1mA  
IC = –10mA, IB = –1mA  
VCE = –10V, IC = –1mA  
70  
220  
Collector to emitter saturation voltage VCE(sat)  
– 0.1  
– 0.7  
300  
2.8  
V
V
Base to emitter voltage  
Transition frequency  
Noise figure  
VBE  
fT  
VCB = –10V, IE = 1mA, f = 200MHz  
150  
MHz  
dB  
NF  
Zrb  
VCB = –10V, IE = 1mA, f = 5MHz  
VCE = –10V, IC = –1mA, f = 2MHz  
4.0  
50  
Reverse transfer impedance  
Common emitter reverse transfer  
capacitance  
22  
VCE = –10V, IC = –1mA,  
Cre  
1.2  
2.0  
pF  
f = 10.7MHz  
*hFE Rank classification  
Rank  
hFE  
B
C
70 ~ 140  
110 ~ 220  
1

与2SA0838相关器件

型号 品牌 描述 获取价格 数据表
2SA0838(2SA838) ETC 2SA0838 (2SA838) - PNP Transistor

获取价格

2SA0838|2SA838 ETC Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others

获取价格

2SA0838B ETC TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 30MA I(C) | TO-226AA

获取价格

2SA0838C ETC TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 30MA I(C) | TO-226AA

获取价格

2SA0879 PANASONIC For general amplification Complementary to 2SC1573

获取价格

2SA0879(2SA879) ETC 2SA0879 (2SA879) - PNP Transistor

获取价格