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2SA0794AR PDF预览

2SA0794AR

更新时间: 2024-01-23 08:35:43
品牌 Logo 应用领域
松下 - PANASONIC 局域网放大器晶体管
页数 文件大小 规格书
4页 252K
描述
Power Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN

2SA0794AR 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:ROHS COMPLIANT, TO-126B-A1, 3 PIN
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.83
Is Samacsys:N外壳连接:ISOLATED
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:120 V
配置:SINGLE最小直流电流增益 (hFE):130
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):1.2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):120 MHz
Base Number Matches:1

2SA0794AR 数据手册

 浏览型号2SA0794AR的Datasheet PDF文件第2页浏览型号2SA0794AR的Datasheet PDF文件第3页浏览型号2SA0794AR的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Power Transistors  
2SA0794 (2SA794), 2SA0794A (2SA794A)  
Silicon PNP epitaxial planar type  
For low-frequency output driver  
Unit: mm  
+0.5  
–0.1  
8.0  
3.2 0.2  
Complementary to 2SC1567, 2SC1567A  
φ 3.16 0.1  
Features  
High collector-emitter voltage (Base open) VCEO  
Optimum for the driver stage of low-frequency and 40 W t100 W  
output amplifier  
TO-126B package which requires no insulation plte for nstalla-  
tion to the heat sink  
Absolute Maximum Ratings Ta = 25°
0.75 0.1  
4.6 0.2  
0.5 0.1  
2.3 0.2  
Parameter  
ymbol  
Rating  
100  
120  
10  
120  
5  
Unit  
0.5 0.1  
1.76 0.1  
2SA0794  
2SA
SA04  
2SA0794A  
VBO  
V
Collector-base voltage  
(Emitter open)  
1: Emitter  
2: Collector  
3: Base  
1
2
3
CEO  
V
Collector-emitter voltage  
(Base open)  
TO-126B-A1 Package  
Emitter-base voltag(Collecor open) VEBO  
V
A
Collector curren
PC  
j  
0.5  
1  
Peak colectocurret  
llector posipation  
Junctin teture  
Storge teperature  
A
1.2  
W
°C  
°C  
150  
Tstg  
55 to +150  
Electracteristics Ta = 25°C 3°C  
r  
Symbol  
Conditions  
Min  
100  
120  
5  
Typ  
Max  
Unit  
2SA094  
VCEO  
IC = −100 µA, IB = 0  
V
Collector-emiage  
(Base open)  
2SA0794A  
Emitter-base voltage (Collector open)  
Forward current transfer ratio  
VEBO  
IE = −1 µA, IC = 0  
V
*
hFE1  
VCE = −10 V, IC = −150 mA  
VCE = −5 V, IC = −500 mA  
90  
220  
hFE2  
50  
100  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = −500 mA, IB = −50 mA  
VBE(sat) IC = −500 mA, IB = −50 mA  
0.2 0.4  
0.85 1.20  
120  
V
V
fT  
VCB = −10 V, IE = 50 mA, f = 200 MHz  
VCB = −10 V, IE = 0, f = 1 MHz  
MHz  
pF  
Collector output capacitance  
Cob  
20  
30  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
Q
R
hFE1  
90 to 155  
130 to 220  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: February 2003  
SJD00001BED  
1

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