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2SA0794A

更新时间: 2024-02-06 18:09:43
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松下 - PANASONIC 晶体晶体管功率双极晶体管放大器局域网
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描述
Silicon PNP epitaxial planar type

2SA0794A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SIP包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.84Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):130JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):1.2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):120 MHzBase Number Matches:1

2SA0794A 数据手册

 浏览型号2SA0794A的Datasheet PDF文件第2页浏览型号2SA0794A的Datasheet PDF文件第3页浏览型号2SA0794A的Datasheet PDF文件第4页 
Power Transistors  
2SA0794 (2SA794), 2SA0794A (2SA794A)  
Silicon PNP epitaxial planar type  
For low-frequency output driver  
Unit: mm  
+0.5  
–0.1  
8.0  
3.2 0.2  
Complementary to 2SC1567, 2SC1567A  
φ 3.16 0.1  
Features  
High collector-emitter voltage (Base open) VCEO  
Optimum for the driver stage of low-frequency and 40 W to 100 W  
output amplifier  
TO-126B package which requires no insulation plate for installa-  
tion to the heat sink  
Absolute Maximum Ratings Ta = 25°C  
0.75 0.1  
4.6 0.2  
0.5 0.1  
2.3 0.2  
Parameter  
Symbol  
Rating  
100  
120  
100  
120  
5  
Unit  
0.5 0.1  
1.76 0.1  
2SA0794  
2SA0794A  
2SA0794  
2SA0794A  
VCBO  
V
Collector-base voltage  
(Emitter open)  
1: Emitter  
2: Collector  
3: Base  
1
2
3
VCEO  
V
Collector-emitter voltage  
(Base open)  
TO-126B-A1 Package  
Emitter-base voltage (Collector open) VEBO  
V
A
Collector current  
IC  
ICP  
PC  
Tj  
0.5  
1  
Peak collector current  
Collector power dissipation  
Junction temperature  
Storage temperature  
A
1.2  
W
°C  
°C  
150  
Tstg  
55 to +150  
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
Conditions  
Min  
100  
120  
5  
Typ  
Max  
Unit  
2SA0794  
VCEO  
IC = −100 µA, IB = 0  
V
Collector-emitter voltage  
(Base open)  
2SA0794A  
Emitter-base voltage (Collector open)  
Forward current transfer ratio  
VEBO  
IE = −1 µA, IC = 0  
V
*
hFE1  
VCE = −10 V, IC = −150 mA  
VCE = −5 V, IC = −500 mA  
90  
220  
hFE2  
50  
100  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = −500 mA, IB = −50 mA  
VBE(sat) IC = −500 mA, IB = −50 mA  
0.2 0.4  
0.85 1.20  
120  
V
V
fT  
VCB = −10 V, IE = 50 mA, f = 200 MHz  
VCB = −10 V, IE = 0, f = 1 MHz  
MHz  
pF  
Collector output capacitance  
Cob  
20  
30  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
Q
R
hFE1  
90 to 155  
130 to 220  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: February 2003  
SJD00001BED  
1

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