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2SA0719 PDF预览

2SA0719

更新时间: 2024-01-28 06:22:06
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管驱动放大器
页数 文件大小 规格书
4页 82K
描述
For low-frequency power amplification and driver amplification Complementary

2SA0719 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.84Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):120
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.625 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

2SA0719 数据手册

 浏览型号2SA0719的Datasheet PDF文件第2页浏览型号2SA0719的Datasheet PDF文件第3页浏览型号2SA0719的Datasheet PDF文件第4页 
Transistors  
2SA0719, 2SA0720 (2SA719, 2SA720)  
Silicon PNP epitaxial planar type  
For low-frequency power amplification and driver amplification  
Unit: mm  
Complementary to 2SC1317, 2SC1318  
5.0 0.2  
4.0 0.2  
Features  
Complementary pair with 2SC1317 and 2SC1318  
0.7 0.1  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
30  
Unit  
2SA0719  
2SA0720  
2SA0719  
2SA0720  
VCBO  
V
Collector-base voltage  
(Emitter open)  
+0.15  
–0.1  
+0.15  
60  
0.45  
0.45  
–0.1  
+0.6  
+0.6  
2.5  
–0.2  
VCEO  
25  
V
2.5  
Collector-emitter voltage  
(Base open)  
–0.2  
50  
1: Emitter  
1
2 3  
2: Collector  
3: Base  
EIAJ: SC-43A  
Emitter-base voltage (Collector open) VEBO  
5  
V
mA  
A
Collector current  
IC  
ICP  
PC  
Tj  
500  
1  
TO-92-B1 Package  
Peak collector current  
Collector power dissipation  
Junction temperature  
Storage temperature  
625  
mW  
°C  
150  
Tstg  
55 to +150  
°C  
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
2SA0719  
2SA0720  
2SA0719  
2SA0720  
VCBO  
IC = −10 µA, IE = 0  
30  
60  
25  
50  
5  
V
Collector-base voltage  
(Emitter open)  
VCEO  
IC = −10 mA, IB = 0  
V
Collector-emitter voltage  
(Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Forward current transfer ratio  
VEBO  
ICBO  
IE = −10 µA, IC = 0  
V
µA  
VCB = −20 V, IE = 0  
0.1  
*
hFE1  
VCE = −10 V, IC = −150 mA  
VCE = −10 V, IC = −500 mA  
85  
40  
340  
hFE2  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = −300 mA, IB = −30 mA  
VBE(sat) IC = −300 mA, IB = −30 mA  
0.35 0.60  
V
1.1  
200  
6
1.5  
V
fT  
VCB = −10 V, IE = 50 mA, f = 200 MHz  
VCB = −10 V, IE = 0, f = 1 MHz  
MHz  
pF  
Collector output capacitance  
Cob  
15  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
Q
R
S
hFE1  
85 to 170  
120 to 240  
170 to 340  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: January 2003  
SJC00002CED  
1

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