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2PG401

更新时间: 2024-02-09 19:11:50
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管
页数 文件大小 规格书
1页 25K
描述
Insulated Gate Bipolar Transistor

2PG401 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
HTS代码:8541.29.00.95风险等级:5.84
最大集电极电流 (IC):5 A集电极-发射极最大电压:400 V
配置:SINGLE门极发射器阈值电压最大值:1.5 V
门极-发射极最大电压:8 VJESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):15 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管元件材料:SILICON
标称断开时间 (toff):1850 ns标称接通时间 (ton):1530 ns

2PG401 数据手册

  
IGBTs  
2PG401  
Insulated Gate Bipolar Transistor  
Features  
unit: mm  
High breakdown voltage: VCES = 400V  
Allowing to control large current: IC(peak) = 130A  
Allowing to provide with the surface mounting package  
7.0±0.3  
3.0±0.2  
3.5±0.2  
Applications  
For flash-light for use in a camera  
1.1±0.1  
0.85±0.1  
0.4±0.1  
0.75±0.1  
Absolute Maximum Ratings (TC = 25°C)  
2.3±0.2  
Parameter  
Symbol  
VCES  
VGES  
IC  
Ratings  
Unit  
V
4.6±0.4  
2
1
3
Collector to emitter voltage  
Gate to emitter voltage  
400  
±8  
V
1: Gate  
2: Collector  
3: Emitter  
DC  
Collector current  
Pulse  
5
130  
A
ICP  
A
I Type Package  
Allowable power  
dissipation  
TC = 25°C  
Ta = 25°C  
15  
PC  
W
1.3  
Channel temperature  
Storage temperature  
Tch  
150  
°C  
°C  
Tstg  
55 to +150  
Electrical Characteristics (TC = 25°C)  
Parameter  
Collector to emitter cut-off current ICES  
Gate to emitter leakage current IGES  
Symbol  
Conditions  
VCE = 320V, VGE = 0  
VGE = ±8V, VCE = 0  
IC = 1mA, VGE = 0  
min  
typ  
max  
10  
Unit  
µA  
µA  
V
±1  
Collector to emitter breakdown voltage VCES  
400  
0.5  
Gate threshold voltage  
Collector to emitter  
saturation voltage  
VGE(th)  
VCE = 10V, IC = 1mA  
VGE = 5V, IC = 5A  
1.5  
2
V
VCE(sat)  
V
VGE = 5V, IC = 130A  
VCE = 10V, VGE = 0, f = 1MHz  
10  
Input capacitance (Common Emitter) Cies  
1930  
130  
1.4  
pF  
ns  
µs  
ns  
µs  
Turn-on time (delay time)  
Rise time  
td(on)  
tr  
td(off)  
tf  
VCC = 300V, IC = 130A  
Turn-off time (delay time)  
Fall time  
VGE = 5V, Rg = 25Ω  
350  
1.5  
1

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