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2PG006 PDF预览

2PG006

更新时间: 2024-02-28 14:09:50
品牌 Logo 应用领域
松下 - PANASONIC 局域网功率控制晶体管
页数 文件大小 规格书
4页 398K
描述
Insulated Gate Bipolar Transistor, 40A I(C), 430V V(BR)CES, N-Channel, TO-220AB, TO-220D-A1, 3 PIN

2PG006 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
HTS代码:8541.29.00.95风险等级:5.82
最大集电极电流 (IC):40 A集电极-发射极最大电压:430 V
配置:SINGLEJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):360 ns
标称接通时间 (ton):465 nsBase Number Matches:1

2PG006 数据手册

 浏览型号2PG006的Datasheet PDF文件第2页浏览型号2PG006的Datasheet PDF文件第3页浏览型号2PG006的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
IGBT  
2PG006  
Silicon N-channel enhancement IGBT  
For plasma display panel drive  
For high speed switching circuits  
Package  
Features  
Coe  
Low collector-emitter saturation voltage: VCE(sat) < 2.4 V  
High-speed switching:tf = 175 ns (typ.)  
O-220D-A1  
Marking ymbol: 2PG006  
Pin Na
1. Gat
Absolute Maximum Ratings TC = 25°C  
Parameter  
Collector-emitter voltage (E-B short)  
Gate-emitter voltage (E-B short)  
Collector current  
Symbol  
VCES  
VGES  
IC  
Rating  
430  
Unit  
V
llecto
Emier  
30 to
V
Internal Connection  
A
C
E
Peak collector current *  
230  
A
40  
W
W
°C  
°C  
G
Power dissipation  
PC  
Tj  
T = 25°
2.
Junction temperature  
Storage temperature  
150  
T
stg  
55 to +50  
Note) : Assurance of repetve pulse. (epetitive period 5 ms on-duty 20%)  
*
But, it must stawithin 40% of all that the ssed ulse repetitively.  
T
5.On-duty 20%  
≤  
Electical Characteristcs TC = 25°C±3°C  
Paramete
Collecor-emishort)  
Collector-emitter B short)  
Gate-emitter cutoff cur-B short)  
Gate-emitter threshold voltage  
Symbol  
Conditions  
IC = 1 mA, VGE = 0  
Min  
Typ  
Max  
Unit  
V
VCES  
ICES  
IGES  
430  
*
VCE = 344 V, VGE = 0  
5.0  
±1.0  
5.5  
mA  
mA  
V
VGE = ±35 V, 30 V, VCE = 0  
VGE(th) VCE = 10 V, IC = 1.0 mA  
VCE(sat) VGE = 15 V, IC = 40A  
–VCE IC = –100 mA, VGE = 15 V  
Cies  
3.0  
18  
Collector-emitter saturation voltage  
Collector-emitter reverse break down voltage  
Short-circuit input capacitance (Common emitter)  
Short-circuit output capacitance (Common emitter)  
Reverse transfer capacitance (Common emitter)  
Gate charge load  
1.75  
22.5  
1200  
130  
20  
2.4  
V
V
pF  
pF  
pF  
nC  
nC  
nC  
ns  
Coes  
Cres  
Qg  
VCE = 25 V, VGE = 0, f = 1 MHz  
54  
VCC = 200 V, IC = 40A, VGE = 15 V  
Gate-emitter charge  
Qge  
Qgc  
td(on)  
tr  
7
Gate-collector charge  
22  
Turn-on delay time  
65  
Rise time  
400  
185  
175  
ns  
VCC = 200 V, IC = 40A,  
RL 5 , VGE = 15 V  
Turn-off delay time  
td(off)  
tf  
ns  
Fall time  
260  
ns  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : ICES is 100% tested according to the ICES inspection standards. (< 1.0 mAunder the conditions of VCE = 344 V, VGE = 0)  
*
Publication date: February 2009  
SJN00006AED  
1

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