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PAD200 PDF预览

PAD200

更新时间: 2024-01-08 00:12:48
品牌 Logo 应用领域
Linear Systems 二极管
页数 文件大小 规格书
2页 198K
描述
PICO AMPERE DIODES

PAD200 数据手册

 浏览型号PAD200的Datasheet PDF文件第2页 
PAD SERIES  
PICO AMPERE DIODES  
Linear Integrated Systems  
FEATURES  
DIRECT REPLACEMENT FOR SILICONIX PAD SERIES  
REVERSE BREAKDOWN VOLTAGE  
REVERSE CAPACITANCE  
PAD*  
BOTTOM VIEW  
BVR -30V  
Crss 2.0pF  
PAD1,2,5  
BOTTOM VIEW  
TO-72  
TO-72  
ABSOLUTE MAXIMUM RATINGS1  
@ 25 °C (unless otherwise stated)  
Maximum Temperatures  
2
3
K
C
2
K*  
1
A
1
A
Storage Temperature  
-65 to +150 °C  
-55 to +135 °C  
JPAD  
Operating Junction Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation (PAD)  
Continuous Power Dissipation (J/SSTPAD)  
Maximum Currents  
SSTPAD  
SOT-23  
TO-92  
BOTTOM VIEW  
TOP VIEW  
1
K
K
300mW  
350mW  
3
K
1
A
2
A
2
Forward Current (PAD)  
Forward Current (J/SSTPAD)  
50mA  
10mA  
* Cathode tied to Case  
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)  
SYMBOL  
CHARACTERISTIC  
MIN TYP MAX UNITS CONDITIONS  
ALL PAD  
ALL SSTPAD  
ALL JPAD  
-45  
-30  
-35  
Reverse Breakdown  
Voltage  
BVR  
IR = -1µA  
V
VF  
Forward Voltage  
0.8  
0.5  
1.5  
1.5  
0.8  
2
IF = 5mA  
PAD1,5  
All Others  
Crss  
Total Reverse Capacitance  
pF  
VR = -5V, f = 1MHz  
SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)  
SYMBOL CHARACTERISTIC  
PAD2  
-1  
-2  
JPAD2  
SSTPAD2 UNITS CONDITIONS  
(SST/J)PAD1  
(SST/J)PAD2  
(SST/J)PAD5  
-5  
-5  
-5  
(SST/J)PAD10  
(SST/J)PAD20  
(SST/J)PAD50  
(SST/J)PAD100  
(SST/J)PAD200  
(SST/J)PAD500  
-10  
-20  
-50  
-100  
-10  
-20  
-50  
-100  
-200  
-500  
-10  
-20  
-50  
Maximum Reverse  
IR  
pA  
VR = -20V  
Leakage Current2  
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261  

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