Datasheet > PA910BD

PA910BD

更新时间： 2024-09-14 17:15:35

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	187K
描述
TO-252

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中文翻译

获取价格

数据手册

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PA910BD 数据手册

N-Channel Enhancement Mode

Field Effect Transistor

PA910BD

TO-252

NIKO-SEM

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

100V

R_DS(ON)

I_D

8.1A

190mΩ

1. GATE

2. DRAIN

3. SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Gate-Source Voltage

SYMBOL

LIMITS

UNITS

V_GS

±20

T_C= 25 °C

8.1

Continuous Drain Current²

I_D

T_C= 100 °C

5.7

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_As

2.8

L = 1mH

E_AS

T_C= 25 °C

T_C= 100 °C

Power Dissipation

P_D

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 175

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Case

Junction-to-Ambient

SYMBOL

TYPICAL

MAXIMUM

UNITS

°C / W

R_JC

R_JA

62.5

¹Pulse width limited by maximum junction temperature.

²Package limitation current is 5.3A.

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

MIN TYP MAX

PARAMETER

SYMBOL

TEST CONDITIONS

STATIC

UNIT

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

100

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

1.3

1.9

2.3

V_DS= 0V, V_GS= ±20V

±100 nA

V_DS= 80V, V_GS= 0V

Zero Gate Voltage Drain Current

I_DSS

A

V_DS= 80V, V_GS= 0V, T_J= 100 °C

H-6-4

REV 1.1

12 3 4

中文翻译

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